FJAF6810D FJAF6810D High Voltage Color Display Horizontal Deflection Output (Damper Diode Built-In) High Collector-Base Breakdown Voltage : BV = 1500V CBO High Switching Speed : t (typ.) =0.1 s F For Color TV TO-3PF 1 1.Base 2.Collector 3.Emitter Equivalent Circuit C B NPN Triple Diffused Planar Silicon Transistor 35 typ. E Absolute Maximum Ratings T =25C unless otherwise noted C Symbol Parameter Rating Units V Collector-Base Voltage 1500 V CBO V Collector-Emitter Voltage 750 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current (DC) 10 A C I * Collector Current (Pulse) 20 A CP P Collector Dissipation 60 W C T Junction Temperature 150 C J T Storage Temperature -55 ~ 150 C STG * Pulse Test: Pulse Width=5ms, Duty Cycle < 10% Electrical Characteristics T =25C unless otherwise noted C Symbol Parameter Test Conditions Min Typ Max Units I Collector Cut-off Current V =1500V, R =0 1 mA CES CB BE I Collector Cut-off Current V =800V, I =0 10 A CBO CB E I Emitter Cut-off Current V =4V, I =0 40 250 mA EBO EB C BV Base-Emitter Breakdown Voltage I =300mA, I =0 6 V EBO E C h DC Current Gain V =5V, I =1A 7 FE1 CE C h V =5V, I =6A 58 FE2 CE C V (sat) Collector-Emitter Saturation Voltage I =6A, I =1.5A 3 V CE C B V (sat) Base-Emitter Saturation Voltage I =6A, I =1.5A 1.5 V BE C B V Damper Diode Turn On Voltage I = 6A 2 V F F t * Storage Time V =200V, I =6A, R =33 3 s STG CC C L I =1.2A, I = - 2.4A t * Fall Time B1 B2 0.2 s F * Pulse Test: PW=20 s, duty Cycle=1% Pulsed Thermal Characteristics T =25C unless otherwise noted C Symbol Parameter Typ Max Units R Thermal Resistance, Junction to Case 2.08 C/W jC 2001 Fairchild Semiconductor Corporation Rev. B, August 2001FJAF6810D Typical Characteristics 10 100 I =2.0A B V = 5V CE 8 o I =1.0A Ta = 25 C B I =0.8A B 6 o Ta = 125 C I =0.6A B 10 I =0.4A B 4 o Ta = - 25 C I =0.2A B 2 0 1 0 2468 10 12 14 16 18 0.1 1 10 V V , COLLECTOR-EMITTER VOLTAGE I A , COLLECTOR CURRENT CE C Figure 1. Static Characteristic Figure 2. DC current Gain 10 I = 5 I I = 3 I C B C B 10 1 1 o Ta = 125 C o o Ta = 125 C Ta = 25 C o Ta = 25 C o Ta = - 25 C o 0.1 Ta = - 25 C 0.1 110 110 I A , COLLECTOR CURRENT I A , COLLECTOR CURRENT C C Figure 3. Collector-Emitter Saturation Voltage Figure 4. Collector-Emitter Saturation Voltage 20 10 I = 1.2A, I = 6A 18 B1 C V = 200V CC 16 14 t STG 1 12 10 t F 8 o 0.1 Ta = 25 C 6 4 o Ta = - 25 C 2 o Ta = 125 C 0 0.01 0.0 0.3 0.6 0.9 1.2 1.5 110 V V , BASE-EMITTER VOLTAGE I A , REVERSE BASE CURRENT BE B2 Figure 5. Base-Emitter On Voltage Figure 6. Resistive Load Switching Time 2001 Fairchild Semiconductor Corporation Rev. B, August 2001 I A , COLLECTOR CURRENT V (sat) V , SATURATIOM VOLTAGE I A , COLLECTOR CURRENT C CE C t & t s , SWITCHING TIME F STG V (sat), SATURATION CURRENT h , DC CURRENT GAIN CE FE