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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.FJH1101 Ultra Low Leakage Diode February 2011 FJH1101 Ultra Low Leakage Diode General Description An Ultra Low Leakage Diode in the DO-35 package. The forward voltage is typically greater than 0.5 volts at 1.0 micro-ampere. This product is light sensitive, any damage to the body coating will affect the reverse leakage when exposed to light. Typical Forward Voltages CATHODE 0.500 Minimum BAND 1.0 uA - - - - - - - - - - 530 mV 12.70 Typ 1.000 LOGO 10 uA - - - - - - - - - - 605 mV 0.090 (2.28) Diameter H11 100 uA - - - - - - - - - - 685 mV 01 0.060 (1.53) 1.0 mA- - - - - - - - - - 780 mV XY 10 mA- - - - - - - - - - 895 mV 0.022 (0.558) Diameter 0.200 (5.08) 50 mA- - - - - - - - - - 995 mV 0.018 (0.458) Typ 20 mils 0.120 (3.05) 100 mA- - - - - - - - - - 1.07 V * XY = 6 weeks marking date code, X = last digit of the calendar year (Alpha), Y = 6 weeks numeric code. Absolute Maximum Ratings* T = 25C unless otherwise noted A Symbol Parameter Value Units W Working Inverse Voltage 15 V IV I DC Forward Current (I)150mA F F P Total Power Dissipation at T = 25C 250 mW D A Linear Derating Factor from T = 25C 1.67 mW/ C A R Thermal Resistance Junction-to-Ambient 300 C/W JA T Operating Junction Temperature 175 C J T Storage Temperature -55 to +200 C STG * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Electrical Characteristics T = 25C unless otherwise noted A Symbol Parameter Test Condition Min. Typ. Max. Units B Breakdown Voltage I = 5.0A20 V V R I Reverse Leakage V = 5.0V 5.0 pA R R V = 15V 15 pA R V Forward Voltage I = 50mA 1.1 V F F C Diode Capacitance V = 0V, f = 1.0MHz 2.0 pF T R 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com FJH1101 Rev. A1 1