DATA SHEET www.onsemi.com Gate Drive Optocoupler, High Noise Immunity, 8 8 1 1 2.5 A Output Current PDIP8 GW PDIP8 9.655x6.6, 2.54P CASE 709AC CASE 646CQ FOD3120 Description 8 8 The FOD3120 is a 2.5 A Output Current Gate Drive Optocoupler, 1 1 capable of driving most medium power IGBT/MOSFET. It is ideally PDIP8 GW PDIP8 6.6x3.81, 2.54P suited for fast switching driving of power IGBT and MOSFETs used CASE 709AD CASE 646BW in motor control inverter applications, and high performance power system. MARKING DIAGRAM It utilizes onsemis coplanar packaging technology, OPTOPLANAR , and optimized IC design to achieve high noise immunity, characterized by high common mode rejection. 3120 VXXYYB It consists of a gallium aluminum arsenide (AlGaAs) light emitting diode optically coupled to an integrated circuit with a highspeed driver for push pull MOSFET output stage. 3120 = Device Number Features V = DIN EN/IEC6074755 Option (only appears on component ordered with this option) High Noise Immunity Characterized by 35 kV/ s XX = Two Digit Year Code Minimum Common Mode Rejection YY = Two Digit Work Week B = Assembly Package Code 2.5 A Peak Output Current Driving Capability for Most 1200 V/20 A IGBT Use of PChannel MOSFETs at Output Stage Enables Output FUNCTIONAL BLOCK DIAGRAM Voltage Swing Close to the Supply Rail Wide Supply Voltage Range from 15 V to 30 V NC 1 8 V DD Fast Switching Speed 400 ns maximum Propagation Delay ANODE 2 7 V O2 100 ns maximum Pulse Width Distortion Under Voltage LockOut (UVLO) with Hysteresis CATHODE 3 V 6 O1 Extended Industrial Temperate Range, NC 4 V SS 40C to 100C Temperature Range 5 Safety and Regulatory Approvals Note: A 0.1 F bypass capacitor must be UL1577, 5000 V for 1 min. RMS connected between pins 5 and 8. DIN EN/IEC6074755 R of 1 (typ.) Offers Lower Power Dissipation DS(ON) ORDERING INFORMATION >8.0 mm Clearance and Creepage Distance (Option T or TS) See detailed ordering and shipping information in the package 1414 V Peak Working Insulation Voltage (V ) IORM dimensions section on page 14 of this data sheet. This is a PbFree Device Applications Industrial Inverter Uninterruptible Power Supply Induction Heating Isolated IGBT/Power MOSFET Gate Drive Related Resources FOD3150, 1 A Output Current, Gate Drive Optocoupler Datasheet FOD3120 Table 1. TRUTH TABLE LED V V Positive Going (Turnon) V V Negative Going (Turnoff) V DD SS DD SS O Off 0 V to 30 V 0 V to 30 V Low On 0 V to 11.5 V 0 V to 10 V Low On 11.5 V to 13.5 V 10 V to 12 V Transition On 13.5 V to 30 V 12 V to 30 V High Table 2. PIN DEFINITIONS Pin Name Description 1 NC Not Connected 2 Anode LED Anode 3 Cathode LED Cathode 4 NC Not Connected 5 V Negative Supply Voltage SS 6 V Output Voltage 2 (internally connected to V ) O2 O1 7 Output Voltage 1 V O1 8 V Positive Supply Voltage DD Table 3. SAFETY AND INSULATION RATINGS As per DIN EN/IEC 6074755. This optocoupler is suitable for safe electrical insulation only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Symbol Parameter Min. Typ. Max. Unit Installation Classifications per DIN VDE < 150 V IIV RMS 0110/1.89 Table 1, For Rated Mains Voltage < 300 V IIV RMS < 450 V IIII RMS < 600 V IIII RMS < 1000 V IIII RMS (Option T, TS) Climatic Classification 40/100/21 Pollution Degree (DIN VDE 0110/1.89) 2 CTI Comparative Tracking Index 175 V Input to Output Test Voltage, Method A, V x 1.6 = V , 2262 Vpeak PR IORM PR Type and Sample Test with t = 10 s, Partial Discharge < 5 pC m Input to Output Test Voltage, Method B, V x 1.875 = V , 2651 Vpeak IORM PR 100% Production Test with t = 1 s, Partial Discharge < 5 pC m V Maximum Working Insulation Voltage 1414 Vpeak IORM V Highest Allowable Over Voltage 6000 Vpeak IOTM External Creepage 8.0 mm External Clearance 7.4 mm External Clearance (for Option T or TS, 0.4 Lead Spacing) 10.16 mm DTI Distance Through Insulation (Insulation Thickness) 0.5 mm T Case Temperature (Note 1) 175 C S I Input Current (Note 1) 400 mA S,INPUT P Output Power (Duty Factor 2.7 %) (Note 1) 700 mW S,OUTPUT 9 R Insulation Resistance at T , V = 500 V (Note 1) 10 IO S IO 1. Safety limit value maximum values allowed in the event of a failure. www.onsemi.com 2