DATA SHEET www.onsemi.com 3 A Output Current, High PDIP8 6.6x3.81, 2.54P Speed MOSFET Gate Driver CASE 646BW 8 1 Optocoupler PDIP8 9.655x6.61, 2.54P CASE 646CQ FOD3182 8 1 Description The FOD3182 is a 3 A Output Current, High Speed MOSFET Gate PDIP8 GW 8 CASE 709AC Drive Optocoupler. It consists of a aluminium gallium arsenide 1 (AlGaAs) light emitting diode optically coupled to a CMOS detector with PMOS and NMOS output power transistors integrated circuit power stage. It is ideally suited for high frequency driving of power PDIP8 GW 8 CASE 709AD MOSFETS used in Plasma Display Panels (PDPs), motor control 1 inverter applications and high performance DC/DC converters. The device is packaged in an 8pin dual inline housing compatible with 260C reflow processes for lead free solder compliance. MARKING DIAGRAM Features High Noise Immunity Characterized by 50 kV/ s (Typ.) Common ON Mode Rejection V = 2,000 V CM 3182 VXXYYB Guaranteed Operating Temperature Range of 40C to +100C 3 A Peak Output Current 3182 = Device Number Fast Switching Speed V = VDE Mark (Note: Only appears on parts ordered with DIN EN/IEC 6074752 option See 210 ns Max. Propagation Delay ordering table) 65 ns Max. Pulse Width Distortion XX = Two Digit Year Code, e.g., 11 Fast Output Rise/Fall Time YY = Digit Work Week Ranging from 01 to 53 B = Assembly Package Code Offers Lower Dynamic Power Dissipation 250 kHz Maximum Switching Speed Wide V perating Range: 10 V to 30 V DD O Use of PChannel MOSFETs at Output Stage Enables Output FUNCTIONAL BLOCK DIAGRAM Voltage Swing Close to the Supply Rail (RailtoRail Output) 5000 Vrms, 1 Minute Isolation NC 1 8 V DD Under Voltage Lockout Protection (UVLO) with Hysteresis Optimized for Driving MOSFETs ANODE 2 7 V O2 Minimum Creepage Distance of 8.0 mm Minimum Clearance Distance of 10 mm to 16 mm (Option TV or CATHODE 3 6 V O1 TSV) Minimum Insulation Thickness of 0.5 mm 4 5 NC V SS UL and VDE* 1,414 Peak Working Insulation Voltage (V ) IORM NOTE: A 0.1 F bypass capacitor must be *Requires V Ordering Option connected between pins 5 and 8. Applications Plasma Display Panel High Performance DC/DC Convertor ORDERING INFORMATION See detailed ordering and shipping information on page 16 of High Performance Switch Mode Power Supply this data sheet. High Performance Uninterruptible Power Supply Isolated Power MOSFET Gate Drive Semiconductor Components Industries, LLC, 2010 1 Publication Order Number: September, 2021 Rev. 2 FOD3182/DFOD3182 TRUTH TABLE LED V V Positive Going (Turnon) V V Negative Going (Turnoff) V DD SS DD SS O Off 0 V to 30 V 0 V to 30 V Low On 0 V to 7.4 V 0 V to 7 V Low On 7.4 V to 9 V 7 V to 8.5 V Transition On 9 V to 30 V 8.5 V to 30 V High PIN DEFINITIONS Pin No. Name Description 1 NC Not Connected 2 Anode LED Anode 3 Cathode LED Cathode 4 NC Not Connected 5 V Negative Supply Voltage SS 6 V Output Voltage 2 (internally connected to V ) O2 O1 7 V Output Voltage 1 O1 8 V Positive Supply Voltage DD SAFETY AND INSULATION RATINGS (As per DIN EN/IEC 6074752. This optocoupler is suitable for safe electrical insulation only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits.) Symbol Parameter Min. Typ. Max. Unit Installation Classications per DIN VDE 0110/1.89 Table 1 For Rated Mains Voltage < 150 Vrms IIV For Rated Mains Voltage < 300 Vrms IIV For Rated Mains Voltage < 450 Vrms IIII For Rated Mains Voltage < 600 Vrms IIII For Rated Mains Voltage < 1000 Vrms (Option T, TS) IIII Climatic Classication 40/100/21 Pollution Degree (DIN VDE 0110/1.89) 2 CTI Comparative Tracking Index 175 V Input to Output Test Voltage, Method b, 2651 PR V x 1.875 = V , 100% Production Test with tm = 1 second, IORM PR Partial Discharge < 5 pC Input to Output Test Voltage, Method a, 2121 V x 1.5 = V , Type and Sample Test with tm = 60 seconds, IORM PR Partial Discharge < 5 pC V Max Working Insulation Voltage 1,414 V IORM peak V Highest Allowable Over Voltage 6000 V IOTM peak External Creepage 8 mm External Clearance 7.4 mm External Clearance (for Option T or TS 0.4 Lead Spacing) 10.16 mm Insulation Thickness 0.5 mm Safety Limit Values Maximum Values Allowed in the Event of a Failure T Case Temperature 150 C Case I Input Current 25 mA S,INPUT P Output Power (Duty Factor 2.7%) 250 mW S,OUTPUT 9 R Insulation Resistance at T , V = 500 V 10 IO S IO www.onsemi.com 2