FSB50825B/FSB50825BS Motion SPM 5 Series Description The FSB50825B / FSB50825BS is an advanced Motion SPM 5 module providing a fully featured, high performance inverter output for AC Induction, BLDC and PMSM motors such as refrigerators, fans and pumps. These modules integrate optimized gate drive of the builtin MOSFETs www.onsemi.com (FRFET technology) to minimize EMI and losses, while also providing multiple onmodule protection features including undervoltage lockouts and thermal monitoring. The builtin highspeed HVIC requires only a single supply voltage and translates the incoming logiclevel gate inputs to the highvoltage, highcurrent drive signals required to properly drive the modules internal MOSFETs. Separate opensource MOSFET terminals are available for each phase to support the widest variety of control algorithms. SPM5E023 / 23LD, PDD STD Features CASE MODEJ UL Certified No. E209204 (UL1557) Optimized for Over 10 kHz Switching Frequency 250 V R = 0.55 (Max) FRFET MOSFET 3Phase Inverter DS(ON) with Gate Drivers and Protection BuiltIn Bootstrap Diodes Simplify PCB Layout Separate OpenSource Pins from LowSide MOSFETs for SPM5H023 / 23LD, PDD STD, ThreePhase CurrentSensing SPM23BD ActiveHIGH Interface, Works with 3.3 / 5 V Logic, Schmitttrigger CASE MODEM Input Optimized for Low Electromagnetic Interference MARKING DIAGRAM HVIC for Gate Driving and UnderVoltage Protection Isolation Rating: 1500 V / min rms Y&Z&K&E&E&E&3 RoHS Compliant FSB50825X Moisture Sensitive Level (MSL) 3 for SMD PKG Applications Y = ON Semiconductor Logo 3Phase Inverter Driver for Small Power AC Motor Drives &Z = Assembly Plant Code &3 = Data Code (Year & Week) &K = Lot FSB50825X = Specific Device Code X = B or BS ORDERING INFORMATION See detailed ordering and shipping information on page 3 of this data sheet. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: January, 2019 Rev. 0 FSB50825B/DFSB50825B/FSB50825BS ABSOLUTE MAXIMUM RATINGS (T = 25C, Unless otherwise noted) C Symbol Parameter Conditions Rating Unit DC Link Input Voltage, V 250 V PN DrainSource Voltage of Each MOSFET BV DrainSource Voltage V = 0V, I = 250 A 250 V DSS IN D V = 200V, V = 0V, PN IN I ZeroBias Static Leakage Current 40 A PN V = V = 0V, DD BS T = T = 25C for all phase C J I (Note 2) Each MOSFET Drain Current, Continuous T = 25C 3.6 A D 25 C I (Note 2) Each MOSFET Drain Current, Continuous T = 80C 2.7 A D 80 C T = 25C, PW < 100 s I (Note 2) Each MOSFET Drain Current, Peak 9.0 A DP C I (Note 2) Each FRFET Drain Current, Rms T = 80C, F < 20 kHz 1.9 A DRMS C PWM rms P (Note 2) Maximum Power Dissipation T = 25C, For Each MOSFET 14.2 W D C CONTROL PART (Each HVIC Unless Otherwise Specified) Conditions Symbol Parameter Rating Unit V Control Supply Voltage Applied Between V and COM 20 V DD DD V Highside Bias Voltage Applied Between V and V 20 V BS B S V Input Signal Voltage Applied Between IN and COM 0.3 ~ V +0.3 V IN DD BOOTSTRAP DIODE PART (Each Bootstrap Diode Unless Otherwise Specified) Symbol Parameter Conditions Rating Unit V Maximum Repetitive Reverse Voltage RRMB V 250 I (Note 2) Forward Current T = 25C 0.5 A FB C I (Note 2) Forward Current (Peak) T = 25C, Under 1ms Pulse Width FPB C 1.5 A THERMAL RESISTANCE Symbol Parameter Conditions Rating Unit Inverter MOSFET part, (Per Module) C/W 1.7 TOTAL SYSTEM Conditions Symbol Parameter Rating Unit T Operating Junction Temperature 40 ~ 150 C J T Storage Temperature 40 ~ 125 C STG 60 Hz, Sinusoidal, 1 minute, Connec- V Isolation Voltage 1500 V ISO rms tion Pins to Heatsink Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. For the Measurement Point of Case Temperature T , Please refer to Figure 5. C 2. Calculation Value or Design Factor. 3. Using continuously under heavy loads or excessive assembly conditions (e.g. the application of high temperature/ current/ voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/ current/ voltage, etc.) are within the absolute maximum ratings and the operating ranges. www.onsemi.com 2