Schottky Rectifier, Ultra-Low VF, 10 A, 45 V FSV1045V Description The FSV1045V Schottky rectifier offers breakthrough size and performance. The device is optimized for mobile charger applications. www.onsemi.com It sinks only 18 mA reverse current at high temperature and provides forward voltage drop of 0.18 V at 1 A operating current in a charger Anode 1 design. 3 All this capability is packed into a small, flatlead, TO277 Cathode Anode 2 package, optimized for spaceconstrained applications. The FSV1045V supports a typical Z height of 1.1 mm. It is RoHS Schottky Rectifier compliant and halogen free. It is also qualified for a wave soldering process. 3 Features UltraLow Forward Voltage Drop: 0.41 V Typical at 10 A, T = 25C A 2 0.44 V Maximum at 10 A, T = 25C A 1 Low Thermal Resistance TO2773LD Very Low Profile: Typical Height of 1.1 mm CASE 340BQ Meets MSL 1 per JESD22A111 FullBody Solder Immersion NonDAP Option Only MARKING DIAGRAM This Device is PbFree, Halogen Free and is RoHS Compliant Y&Z&3 Applications * Mobile Charger Solar Panel Y = ON Semiconductor Logo Reverse Polarity Protection &Z = Assembly Plant Code &3 = Data Code (Year & Week) * = Specific Device Code FSV1045 ORDERING INFORMATION See detailed ordering and shipping information on page 3 of this data sheet. Semiconductor Components Industries, LLC, 2020 1 Publication Order Number: April, 2020 Rev. 1 FSV1045V/DFSV1045V ABSOLUTE MAXIMUM RATINGS (Note 1) Symbol Parameter Value Unit V Peak Repetitive Reverse Voltage 45 V RRM V Working Peak Reverse Voltage 45 V RWM V RMS Reverse Voltage 32 V RMS V DC Blocking Voltage 45 V R I Average Rectified Output Current (Note 2) T = 105C 10 A O L I NonRepetitive Peak Forward Surge Current (Note 3) 300 A FSM C Typical Junction Capacitance V = 4 V, 1 MHz 820 pF J R T Operating Junction Temperature Range 55 to +150 C J T Storage Temperature Range 55 to +150 C STG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. All test conducted at T = T = 25C unless otherwise noted A J 2. Mounted on 30 mm x 30 mm FR4 PCB 3. Pulse condition: 8.3 ms halfsine wave. Test method is compliant with MIL standard (MILSTD750E) THERMAL CHARACTERISTICS (T = 25C unless otherwise noted) (Note 4) A Minimum Land Maximum Land Pattern Pattern Symbol Parameter Unit R JunctiontoAmbient Thermal Resistance 100 40 C/W JA JunctiontoLead Thermal Characteristics, Thermocouple Soldered 15 12 C/W JL to Anode JunctiontoLead Thermal Characteristics, Thermocouple Soldered 6 5 to Cathode 4. The thermal resistances (R & ) are characterized with device mounted on the following FR4 printed circuit boards, as shown in JA JL Figure 1 and Figure 2. PCB size: 76.2 x 114.3 mm. Minimum land pattern size: 4.9 x 4.8 mm (big pattern, x1), 1.4 x 1.52 mm (small pattern, x2). Maximum land pattern size: 30 x 30 mm (pattern, x2). Force line trace size = 55 mils, sense line trace size = 4 mils. F S F S F F F S S S Figure 1. Minimum Land Pattern of 2 oz Copper Figure 2. Maximum Land Pattern of 2 oz Copper www.onsemi.com 2