FXMAR2102UMX ON Semiconductor

DATA SHEET www.onsemi.com Dual Supply, 2-Bit Voltage 2 Translator / Isolator for I C UQFN8, 1.4x1.2, 0.4P Applications CASE 523AS FXMAR2102 UQFN8 1.6X1.6, 0.5P Description CASE 523AY The FXMAR2102 is a high performance configurable dualvoltagesupply translator for bidirectional voltage translation MARKING DIAGRAM over a wide range of input and output voltages levels. The FXMAR2102 also works in a push pull environment. 2 BU&K It is intended for use as a voltage translator between I CBus &2&Z compliant masters and slaves. Internal 10 k pullup resistors are 1 provided. BU = Device Code The device is designed so the A port tracks the V level and the B CCA &K = 2Digits Lot Run Traceability Code port tracks the V level. This allows for bidirectional A/Bport CCB &2 = 2Digit Date Code voltage translation between any two levels from 1.65 V to 5.5 V. V CCA &Z = Assembly Plant Code can equal V from 1.65 V to 5.5 V. Either V can be poweredup CCB CC first. Internal powerdown control circuits place the device in 3state ORDERING INFORMATION if either V is removed. CC See detailed ordering and shipping information on page 13 of The two ports of the device have automatic directionsense this data sheet. capability. Either port may sense an input signal and transfer it as an output signal to the other port. Features BiDirectional Interface between Any Two Levels: 1.65 V to 5.5 V No Direction Control Needed Internal 10 k PullUp Resistors System GPIO Resources Not Required when OE Tied to V CCA 2 I C Bus Isolation A/B Port V = 175 mV (Typical), V = 150 mV, I = 6 mA OL IL OL OpenDrain Inputs / Outputs Works in Push Pull Environment 2 Accommodates StandardMode and FastMode I CBus Devices 2 Supports I C Clock Stretching & MultiMaster Fully Configurable: Inputs and Outputs Track V CC NonPreferential PowerUp Either V Can PowerUp First CC Outputs Switch to 3State if Either V is at GND CC Tolerant Output Enable: 5 V Packaged in 8Terminal Leadless MicroPak (1.6 mm x 1.6 mm) and Ultrathin MLP (1.2 mm x 1.4 mm) ESD Protection Exceeds: B Port: 8 kV HBM ESD (vs. GND & vs. V ) CCB All Pins: 4 kV HBM ESD (per JESD22A114) 2 kV CDM (per JESD22C101) Semiconductor Components Industries, LLC, 2011 1 Publication Order Number: August, 2021 Rev. 2 FXMAR2102/DFXMAR2102 BLOCK DIAGRAM OE V CCB Dynamic Driver (with Time Out) 10 k Internal Direction Generator & Ctrl VAV B bias bias A B V CCA 10 k Internal Direction Generator & Ctrl Dynamic Driver (With Time Out) Figure 1. Block Diagram, 1 of 2 Channels www.onsemi.com 2