GBU6A - GBU6M Bridge Rectifiers Features GlassPassivated Junction Surge Overload Rating: 175 A Peak Reliable LowCost Construction Utilizing Molded Plastic Technique www.onsemi.com Ideal for Printed Circuit Board UL Certified: UL E258596 PACKAGE MARKING AND ORDERING INFORMATION Packing Method Part Number Marking Package GBU6A GBU6A GBU 4L Rail GBU6B GBU6B GBU6D GBU6D GBU6G GBU6G SIP4 GBU6J GBU6J CASE 127EL GBU6K GBU6K GBU6M GBU6M MARKING DIAGRAM RU Y&Z&3 GBU 6A ~~ + RU = UL Marking Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code GBU6A = Specific Device Code Semiconductor Components Industries, LLC, 2001 1 Publication Order Number: April, 2019 Rev. 2 GBU6M/DGBU6A GBU6M ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) (Note 1) A Value 6A 6B 6D 6G 6J 6K 6M Symbol Parameter Units V Maximum Repetitive Reverse Voltage 50 100 200 400 600 800 1000 V RRM V Maximum RMS Bridge Input Voltage 35 70 140 280 420 560 700 V RMS V DC Reverse Voltage (Rated V ) 50 100 200 400 600 800 1000 V R R I Average Rectified Forward T = 100C 6.0 A F(AV) A Current I NonRepetitive Peak Forward Surge Current 175 A FSM 8.3 ms Single HalfSineWave T Storage Temperature Range 55 to +150 C STG T Operating Junction Temperature 55 to +150 C J Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. THERMAL CHARECTERISTICS (T = 25C unless otherwise noted) A Symbol Parameter Value Units P Power Dissipation 12 W D R Thermal Resistance per Leg, Junction to Ambient (Note 2) 18.6 C/W JA R Thermal Resistance per Leg, Junction to Lead (Note 3) 3.1 C/W JL 2. Device mounted on PCB with 0.5 0.5 inch (12 12 mm) 3. Device mounted on Al plate with 2.6 1.4 0.06 inch (6.5 3.5 0.15 cm) ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Symbol Parameter Value Units V Forward Voltage, per Element 6.0 A 1.0 V F I Reverse Current, per Element at Rated V T = 25C 5.0 A R R A T = 125C 500 A A 2 2 2 I t I t Rating for Fusing t < 8.35 ms 127 A s Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2