H11A817C ON Semiconductor

H11AA814 Series, H11A617 Series, H11A817 Series 4-Pin Phototransistor Optocouplers July 2006 H11AA814 Series, H11A617 Series, H11A817 Series tm 4-Pin Phototransistor Optocouplers Features Applications AC input response (H11AA814 only) H11AA814 Series AC line monitor Compatible to Pb-free IR reow soldering Unknown polarity DC sensor Compact 4-pin dual in-line package Telephone line interface Current transfer ratio in selected groups: H11AA814: 20-300% H11A817: 50-600% H11A617 and H11A817 Series H11AA814A: 50-150% H11A817A: 80-160% Power supply regulators H11A617A: 40%-80% H11A817B: 130-260% Digital logic inputs H11A617B: 63%-125% H11A817C: 200-400% Microprocessor inputs H11A617C: 100%-200% H11A817D: 300-600% H11A617D: 160%-320% Description C-UL, UL and VDE approved The H11AA814 consists of two gallium arsenide infrared High input-output isolation voltage of 5000Vrms emitting diodes, connected in inverse parallel, driving a Minimum BV of 70V guaranteed CEO silicon phototransistor output in a 4-pin dual in-line package. The H11A617/817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package. PackageSchematics H11AA814 4 ANODE, CATHODE 1 4 COLLECTOR 1 CATHODE, ANODE 2 3EMITTER H11A617 & H11A817 1 4 ANODE COLLECTOR 2 CATHODE 3EMITTER 1 2005 Fairchild Semiconductor Corporation www.fairchildsemi.com H11AA814 Series, H11A617 Series, H11A817 Series Rev. 1.0.8H11AA814 Series, H11A617 Series, H11A817 Series 4-Pin Phototransistor Optocouplers (T = 25C Unless otherwise specied.) Absolute Maximum Ratings A Symbol Parameter Device* Value Units TOTAL DEVICE T Storage Temperature All -55 to +150 C STG T Operating Temperature All -55 to +100 C OPR T Lead Solder Temperature All 260 for 10 sec C SOL Total Device Power Dissipation (-55C to 50C) All 200 mW P D EMITTER I Continuous Forward Current 814 Series 50 mA F 617, 817 Series 50 617 Series 6 V V Reverse Voltage R 817 Series 6 LED Power Dissipation (25C ambient) All 70 mW P D No derating up to 100C DETECTOR V Collector-Emitter Voltage All 70 V CEO V Emitter-Collector Voltage 814, 817 Series 6 V ECO 617 Series 7 I Continuous Collector Current All 50 mA C Detector Power Dissipation (25C ambient) All 150 mW P D Derate above 90C 2.9 mW/C Electrical Characteristics (T = 25C Unless otherwise specied.) A Individual Component Characteristics Symbol Parameter Test Conditions Device Min. Typ.* Max. Unit EMITTER V Input Forward Voltage I = 60mA 617 Series 1.35 1.65 V F F I = 20mA 817 Series 1.2 1.5 F I = 20mA 814 Series 1.2 1.5 F I Reverse Leakage V = 6.0V 617 Series .001 10 A R R Current V = 5.0V 817 Series R DETECTOR BV Collector-Emitter I = 0.1 mA, I = 0 ALL 70 100 V CEO C F Breakdown Voltage BV Emitter-Collector I = 10 A, I = 0 814, 817 Series 6 10 V ECO E F Breakdown Voltage 617 Series 7 10 I Collector-Emitter V = 10V, I = 0 H11AA814/A, 817 Series, 1 100 nA CEO CE F Dark Current H11A617C/D H11A617A/B 50 *Typical values at T =25C A 2 www.fairchildsemi.com H11AA814 Series, H11A617 Series, H11A817 Series Rev. 1.0.8