H11AG1M 6-Pin DIP Phototransistor Optocoupler
April 2015
H11AG1M
6-Pin DIP Phototransistor Optocoupler
Features Description
High-Efficiency Low-Degradation Liquid Epitaxial The H11AG1M device consists of a Gallium-Aluminum-
IRED Arsenide IRED emitting diode coupled with a silicon
phototransistor in a dual in-line package. This device
Logic Level Compatible, Input and Output Currents,
provides the unique feature of high current transfer ratio
with CMOS and LS/TTL
at both low output voltage and low input current. This
High DC Current Transfer Ratio at Low Input Currents
makes it ideal for use in low-power logic circuits, tele-
(as low as 200 A)
communications equipment and portable electronics
Safety and Regulatory Approvals:
isolation applications.
UL1577, 4,170 VAC
for 1 Minute
RMS
DIN-EN/IEC60747-5-5, 850 V Peak Working
Insulation Voltage
Applications
CMOS Driven Solid State Reliability
Telephone Ring Detector
Digital Logic Isolation
Schematic Package Outlines
1 6
ANODE BASE
6
6
1
1
CATHODE 2 5 COLLECTOR
6
1
N/C 3 4 EMITTER
Figure 2. Package Outlines
Figure 1. Schematic
2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11AG1M Rev. 1.4H11AG1M 6-Pin DIP Phototransistor Optocoupler
Safety and Insulation Ratings
As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for safe electrical insulation only within the safety limit
data. Compliance with the safety ratings shall be ensured by means of protective circuits.
Parameter Characteristics
< 150 V IIV
Installation Classications per DIN VDE RMS
0110/1.89 Table 1, For Rated Mains Voltage
IIV
< 300 V
RMS
Climatic Classication 55/100/21
Pollution Degree (DIN VDE 0110/1.89) 2
Comparative Tracking Index 175
Symbol Parameter ValueUnit
Input-to-Output Test Voltage, Method A, V x 1.6 = V ,
IORM PR
1360 V
peak
Type and Sample Test with t = 10 s, Partial Discharge < 5 pC
m
V
PR
Input-to-Output Test Voltage, Method B, V x 1.875 = V ,
IORM PR
1594 V
peak
100% Production Test with t = 1 s, Partial Discharge < 5 pC
m
V Maximum Working Insulation Voltage 850 V
IORM peak
V Highest Allowable Over-Voltage 6000 V
IOTM peak
External Creepage 7mm
External Clearance 7mm
External Clearance (for Option TV, 0.4" Lead Spacing) 10 mm
DTI Distance Through Insulation (Insulation Thickness) 0.5 mm
(1)
T Case Temperature 175 C
S
(1)
I Input Current 350 mA
S,INPUT
(1)
Output Power 800 mW
P
S,OUTPUT
(1) 9
R Insulation Resistance at T , V = 500 V > 10
IO S IO
Note:
1. Safety limit values maximum values allowed in the event of a failure.
2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11AG1M Rev. 1.4 2