6-Pin DIP Schmitt Trigger Output Optocoupler H11L1M, H11L2M, H11L3M Description The H11LXM series has a highspeed integrated circuit detector optically coupled to a galliumarsenide infrared emitting diode. The www.onsemi.com output incorporates a Schmitt trigger, which provides hysteresis for noise immunity and pulse shaping. The detector circuit is optimized SCHEMATIC for simplicity of operation and utilizes an opencollector output for maximum application flexibility. ANODE V 1 6 CC Features High Data Rate, 1 MHz Typical (NRZ) GND CATHODE 2 5 Free from Latchup and Oscillation Throughout Voltage and Temperature Ranges Microprocessor Compatible Drive V 3 4 O Logic Compatible Output Sinks 16 mA at 0.4 V Maximum Guaranteed On/Off Threshold Hysteresis Truth Table Wide Supply Voltage Capability, Compatible with All Popular Logic Input Output Systems H L Safety and Regulatory Approvals: LH UL1577, 4,170 VAC for 1 Minute RMS DINEN/IEC6074755, 850 V Peak Working Insulation Voltage Applications LogictoLogic Isolator Programmable Current Level Sensor Line Receiver Eliminate Noise and Transient Problems AC to TTL Conversion Square Wave Shaping PDIP6 PDIP6 PDIP6 Digital Programming of Power Supplies CASE 646BX CASE 646BY CASE 646BZ Interfaces Computers with Peripherals MARKING DIAGRAM ON H11L1 VYWWQ H11L1 = Specific Device Code V = DIN EN/IEC4074755 Option Y = Year Code WW = Work Week Q = Assembly Package Code ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2005 1 Publication Order Number: June, 2020 Rev. 3 H11L3M/DH11L1M, H11L2M, H11L3M SAFETY AND INSULATION RATINGS As per DIN EN/IEC 60747 55, this optocoupler is suitable for safe electrical insulation only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Parameter Characteristics Installation Classifications per DIN VDE < 150 V IIV RMS 0110/1.89 Table 1, For For Rated Mains Voltage < 300 V IIV RMS Climatic Classification 55/100/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index 175 Symbol Parameter Value Units V InputtoOutput Test Voltage, Method A, V 1.6 = V , 1360 V PR IORM PR peak Type and Sample Test with t = 10 s, Partial Discharge < 5 pC m InputtoOutput Test Voltage, Method B, V 1.875 = V , 1594 V IORM PR peak 100% Production Test with t = 1 s, Partial Discharge < 5 pC m V Maximum Working Insulation Voltage 850 V IORM peak V Highest Allowable OverVoltage 6000 V IOTM peak External Creepage 7 mm External Clearance 7 mm External Clearance (for Option TV, 0.4 Lead Spacing) 10 mm DTI Distance Through Insulation (Insulation Thickness) 0.5 mm T Case Temperature (Note 1) 175 C S I Input Current (Note 1) 350 mA S,INPUT P Output Power (Note 1) 800 mW S,OUTPUT 9 R Insulation Resistance at T , V = 500 V (Note 1) >10 IO S IO 1. Safety limit values maximum values allowed in the event of a failure. ABSOLUTE MAXIMUM RATINGS Symbol Parameters Value Units TOTAL DEVICE T Storage Temperature 40 to +125 C STG T Operating Temperature 40 to +85 C OPR T Junction Temperature 40 to +125 C J T Lead Solder Temperature 260 for 10 seconds C SOL P Total Device Power Dissipation at 25C 250 mW D Derate Above 25C 2.94 mW/C EMITTER I Continuous Forward Current 30 mA F V Reverse Voltage 6 V R I (pk) Forward Current Peak (1 s pulse, 300 pps) 100 mA F P LED Power Dissipation 60 mW D DETECTOR P Detector Power Dissipation 150 mW D V V Allowed Range 0 to 16 V O 45 V V Allowed Range 3 to 16 V CC 65 I I Output Current 50 mA O 4 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. www.onsemi.com 2