H11N1M 6-Pin DIP Schmitt Trigger Output Optocoupler The H11N1M has a high speed integrated circuit detector optically coupled to an aluminium gallium arsenide (AlGaAs) infrared emitting diode. The output incorporates a Schmitt trigger, which provides www.onsemi.com hysteresis for noise immunity and pulse shaping. The detector circuit is optimized for simplicity of operation and utilizes an opencollector output for maximum application flexibility. Features High Data Rate, 5 MHz Typical (NRZ) Free from Latchup and Oscillation Throughout Voltage and Temperature Ranges PDIP6 Microprocessor Compatible Drive CASE 646BY Logic Compatible Output Sinks 16 mA at 0.5 V Maximum Guaranteed On/Off Threshold Hysteresis Wide Supply Voltage Capability, Compatible with All Popular Logic Systems Safety and Regulatory Approvals: UL1577, 4,170 VAC for 1 Minute RMS DINEN/IEC6074755, 850 V Peak Working Insulation Voltage PDIP6 PDIP6 Applications CASE 646BZ CASE 646BX LogictoLogic Isolator Programmable Current Level Sensor MARKING DIAGRAM Line Receiver Eliminate Noise and Transient Problems AC to TTL Conversion Square Wave Shaping Interfaces Computers with Peripherals Isolated Power MOS Driver for Power Supplies H11N1 V X YY Q SCHEMATIC 1 H11N1 = Device Code Anode V CC V = DIN EN/IEC6074755 Option = (only appears on component Cathode GND = ordered with this option) Truth Table X = OneDigit Year Code, e.g., 6 Input Output YY = Digit Work Week, NC V O = Ranging from 01 to 53 HL Q = Assembly Package Code LH (Top View) ORDERING INFORMATION See detailed ordering, marking and shipping information on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2005 1 Publication Order Number: April, 2019 Rev. 3 H11N1M/DH11N1M Table 1. SAFETY AND INSULATION RATINGS As per DIN EN/IEC 60747 55, this optocoupler is suitable for safe electrical insulation only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Parameter Characteristics Installation Classifications per DIN VDE 0110/1.89 Table 1, < 150 V IIV RMS For Rated Mains Voltage < 300 V IIV RMS Climatic Classification 55/100/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index 175 Symbol Parameter Value Unit V InputtoOutput Test Voltage, Method A, V x 1.6 = V , 1360 V PR IORM PR peak Type and Sample Test with t = 10 s, Partial Discharge < 5 pC m InputtoOutput Test Voltage, Method B, V x 1.875 = V , 1594 V IORM PR peak 100% Production Test with t = 1 s, Partial Discharge < 5 pC m V Maximum Working Insulation Voltage 850 V IORM peak V Highest Allowable OverVoltage 6,000 V IOTM peak External Creepage 7 mm External Clearance 7 mm External Clearance (for Option TV, 0.4 Lead Spacing) 10 mm DTI Distance Through Insulation (Insulation Thickness) 0.5 mm T Case Temperature (Note 1) 175 C S I Input Current (Note 1) 350 mA S,INPUT P Output Power (Note 1) 800 mW S,OUTPUT 9 R Insulation Resistance at T , V = 500 V (Note 1) > 10 IO S IO 1. Safety limit values maximum values allowed in the event of a failure. Table 2. ABSOLUTE MAXIMUM RATINGS T = 25C unless otherwise specified. A Symbol Parameter Value Units TOTAL DEVICE T Storage Temperature 40 to +125 C STG T Operating Temperature 40 to +85 C OPR T Junction Temperature 40 to +125 C J T Lead Solder Temperature 260 for 10 seconds C SOL P Total Device Power Dissipation at 25C 210 mW D Derate above 25C 2.94 mW/C EMITTER I Continuous Forward Current 30 mA F V Reverse Voltage 6 V R I (pk) Forward Current Peak (1 s pulse, 300 pps) 100 mA F P LED Power Dissipation 60 mW D DETECTOR P Detector Power Dissipation 150 mW D V V Allowed Range 0 to 16 V O 45 V V Allowed Range 3 to 16 V CC 65 I I Output Current 50 mA O 4 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. www.onsemi.com 2