ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. KAI-2001 1600 (H) x 1200 (V) Interline CCD Image Sensor Description The KAI2001 Image Sensor is a high-performance 2-million pixel sensor designed for a wide range of medical, scientific and machine www.onsemi.com vision applications. The 7.4 m square pixels with microlenses provide high sensitivity and the large full well capacity results in high dynamic range. The split horizontal register offers a choice of single or dual output allowing either 15 or 30 frame per second (fps) video rate for the progressively scanned images. Also included is a fast line dump for sub-sampling at higher frame rates. The vertical overflow drain structure provides anti-blooming protection and enables electronic shuttering for precise exposure control. Other features include low dark current, negligible lag and low smear. Table 1. GENERAL SPECIFICATIONS Parameter Typical Value Figure 1. KAI2001 Interline CCD Architecture Interline CCD, Progressive Scan Image Sensor Total Number of Pixels 1640 (H) 1214 (V) Number of Effective Pixels 1608 (H) 1208 (V) Features Number of Active Pixels 1600 (H) 1200 (V) High Resolution Pixel Size 7.4 m (H) 7.4 m (V) High Sensitivity Active Image Size 13.38 mm (H) 9.52 mm (V), High Dynamic Range 14.803 mm (Diagonal), 1 Optical Format Low Noise Architecture Aspect Ratio 4:3 High Frame Rate Number of Outputs 1 or 2 Binning Capability for Higher Frame Rate Saturation Signal 40,000 e Electronic Shutter Quantum Efficiency Applications ABA 55% CBA (RGB) 45%, 42%, 35% Machine Vision Output Sensitivity 16 V/e Scientific Total System Noise 40 MHz 40 e 20 MHz 23 e ORDERING INFORMATION See detailed ordering and shipping information on page 2 of 2 Dark Current < 0.5 nA/cm this data sheet. Dark Current Doubling Temp. 7C Dynamic Range 60 dB Charge Transfer Efficiency > 0.999999 Blooming Suppression 300X Smear 80 dB Image Lag < 10 e Maximum Data Rate 40 MHz Package 32-pin, CERDIP NOTE: All Parameters are specified at T = 40C unless otherwise noted. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: February, 2016 Rev. 3 KAI2001/D