KSC900 KSC900 Low Frequency & Low Noise Amplifier Collector-Base Voltage : V =30V CBO Low Noise Level : NL=50mV (MAX) Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage 30 V CBO V Collector-Emitter Voltage 25 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 50 mA C P Collector Power Dissipation 250 mW C T Junction Temperature 150 C J T Storage Temperature -55 ~ 150 C STG Electrical Characteristics T =25C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I =100 A, I =0 30 V CBO C E BV Collector-Emitter Breakdown Voltage I =10mA, I =0 25 V CEO C B BV Emitter-Base Breakdown Voltage I =10 A, I =0 5 V EBO E C I Collector Cut-off Current V =25V, I =0 50 nA CBO CB E I Emitter Cut-off Current V =3V, I =0 100 nA EBO EB C h DC Current Gain V =3V, I =0.5mA 120 1000 FE CE C V (sat) Collector-Emitter Saturation Voltage I =20mA, I =2mA 0.1 0.2 V CE C B V (on) Base-Emitter On Voltage V =3V, I =0.5mA 0.62 0.7 V BE CE C f Current Gain Bandwidth Product V =3V, I =1mA 100 MHz T CE C NL Noise Level V =12V, I =0.1mA 30 50 mV CC C R =25k S A =80dB, f=1KHz V h Classification FE Classification Y G L V h 120 ~ 240 200 ~ 400 350 ~ 700 600 ~ 1000 FE 2002 Fairchild Semiconductor Corporation Rev. B1, September 2002KSC900 Typical Characteristics 10 500 I = 90 A B VCE=3V 9 450 I = 80 A B 8 400 I = 70 A B 7 350 I = 60 A 6 B 300 5 I = 50 A 250 B 4 I = 40 A 200 B I = 30 A 3 150 B I = 20 A 2 100 B I = 10 A 1 50 B 0 0 0.01 0.1 1 10 100 0246 8 10 12 14 16 18 20 V V , COLLECTOR-EMITTER VOLTAGE IC mA , COLLECTOR CURRENT CE Figure 1. Static Characteristic Figure 2. DC current Gain 10 IC=10IB VCE=3V 10 1 VBE(sat) 1 VCE(sat) 0.1 0.01 0.1 0.1 1 10 100 0.00.2 0.40.6 0.81.0 1.2 IC mA , COLLECTOR CURRENT VBE V , BASE-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage Collector-Emitter Saturation Voltage 1000 10 f = 1MHz VCE=3V IE=0 100 10 1 1 0.1 1 10 100 110 100 I mA , COLLECTOR CURRENT C V V , COLLECTOR-BASE VOLTAGE CB Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product 2002 Fairchild Semiconductor Corporation Rev. B1, September 2002 VBE(sat), VCE(sat) V , SATURATION VOLTAGE I mA , COLLECTOR CURRENT Cob pF , CAPACITANCE C fT MHz , CURRENT GAIN BANDWIDTH PRODUCT IC mA , COLLECTOR CURRENT hFE, DC CURRENT GAIN