LA5735MC-BH ON Semiconductor

Ordering number : ENA2022 LA5735MC Monolithic Linear IC Separately-Excited Step-Down LA5735MC Electrical Characteristics at Ta = 25C, V = 15V IN Ratings Parameter Symbol Conditions Unit min typ max Reference voltage V I = 0.3A 1.20 1.23 1.26 V OS O Reference pin bias current I 1 2 A FB Switching frequency fosc 240 300 360 kHz Short-circuit protection circuit fscp 15 kHz operating switching frequency Saturation voltage Vsat I = 0.3A, V = 0V 1 1.15 V OUT OS Maximum on duty D max V = 0V 100 % OS Minimum on duty D min V = 5V 0 % OS Output leakage current Ilk SW = -0.4V 200 A OUT Supply current Iin V = 2V 5 10 mA OS Current limiter operating current I 0.7 A S Thermal shutdown operating TSD Designed target value. * 165 C temperature Thermal shutdown Hysteresis TSD Designed target value. * 15 C width * Design target value : Design guarantee values are replaced with electrical measurements, and are not measured by temperature. Package Dimensions unit : mm (typ) 3424 Pd max -- Ta 4.9 1 3 Designated board : 114.376.11.6mm 8 glass epoxy 0.8 Mounted on a board 0.75 0.6 12 0.4 1.27 0.42 0.2 0.2 0.15 0 --30 0 30 60 90 120 150 Ambient temperature, Ta - C SANYO : SOIC8 No.A2022-2/6 0.175 3.9 6.0 1.75 MAX 0.375 0.835 Allowable power dissipation, Pd max - W