LB11685AV Monolithic Digital IC 3phase Sensor Less Motor Driver Overview The LB11685AV is a three-phase full-wave current-linear-drive www.onsemi.com motor driver IC. It adopts a sensor less control system without the use of a Hall Effect device. For quieter operation, the LB11685AV features a current soft switching circuit and be optimal for driving the cooling fan motors used in refrigerators, etc. Functions Three-phase Full-wave Linear Drive (Hall Sensor-less Method) Built-in Current Limiter Circuit SSOP24J Built-in Three-phase Output Voltage Control Circuit CASE 565AS Built-in Motor Lock Protection Circuit Motor Lock Protection Detection Output MARKING DIAGRAM FG Output Made by Back EMF Built-in Thermal Shut Down Circuit XXXXXXXXXX Beat Lock Prevention Circuit YMDDD Specifications MAXIMUM RATINGS (T = 25C) XXXXX = Specific Device Code A Y = Year Parameter Symbol Conditions Ratings Unit M = Month Maximum Supply V max 19 V DDD = Additional Traceability Data CC Voltage Input Applied V max 0.3 to V + 0.3 V IN CC PIN ASSIGNMENT Voltage Maximum Output I max 1.2 A UOUT 1 24 VOUT O Current (Note 1) (NC) 2 23 WOUT (NC) 3 22 (NC) Allowable Power P max Mounted on 1.05 W d PGND 4 21 (NC) Dissipation a board (Note 2) MCOM 5 20 RF (NC) 6 19 V Operating T 40 to +85 C CC opr Temperature SGND 7 18 REG FG 8 17 VOH Storage T 55 to +150 C stg RD 9 16 FC1 Temperature (NC) 10 15 FC2 V 11 14 C2 Junction T max 150 C CO j Temperature CX 12 13 C1 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION 1. The I is a peak value of motor-current. See detailed ordering and shipping information on page 7 of O 2. Specified board: 76.1 mm 114.3 mm 1.6 mm, glass epoxy board. this data sheet. CAUTION: Absolute maximum ratings represent the value which cannot be exceeded for any length of time. CAUTION: Even when the device is used within the range of absolute maximum ratings, as a result of continuous usage under high temperature, high current, high voltage, or drastic temperature change, the reliability of the IC may be degraded. Please contact us for the further details. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: January, 2018 Rev. 1 LB11685AV/DLB11685AV RECOMMENDED OPERATING CONDITIONS (T = 25C) A Symbol Parameter Conditions Ratings Unit V Recommended Supply Voltage 12.0 V CC V op Operating Supply Voltage 4.5 to 18.0 V CC Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Symbol Parameter Conditions Min Typ Max Unit I Supply Current FC1 = FC2 = 0 V 5 10 20 mA CC VREG Internal Regulate Voltage 3.0 3.3 3.6 V VOSOUR Output Voltage (Source) I = 0.8 A (Note 5) 1.3 1.7 V O VOSINK Output Voltage (Sink) I = 0.8 A (Note 5) 0.5 1.3 V O VOLIM Current Limiter 0.268 0.300 0.332 V VINCOM MCOM Pin 0 V 2 V CC Common-input Voltage Range ICOM+ MCOM Pin MCOM = 7 V 30 80 A Source Current for Hysteresis ICOM MCOM Pin MCOM = 7 V 30 80 A Sink Current for Hysteresis RTCOM MCOM Pin RTCOM = ICOM+ / ICOM 0.6 1.4 Hysteresis Current Ratio I VCO Input Bias Current V = 2.3 V 0.2 A VCO CO f min VCO Oscillation Minimum Frequency 930 Hz V = 2.1 V, CX = 0.015 F VCO CO Design target (Note 4) f max VCO Oscillation Maximum Frequency 8.6 kHz V = 2.7 V, CX = 0.015 F VCO CO Design target (Note 4) I CX Charge/Discharge Current V = 2.5 V, CX = 1.6 V 70 100 140 A CX CO VCX CX Hysteresis Voltage 0.35 0.55 0.75 IC1(2)+ C1 (C2) Charge Current V = 2.5 V, C1(2) = 1.3 V 12 20 28 A CO IC1(2) C1 (C2) Discharge Current V = 2.5 V, C1(2) = 1.3 V 12 20 28 A CO RTC1(2) C1 (C2) Charge/Discharge Current Ratio RTC1(2) = IC1(2)+ / IC1(2) 0.8 1.0 1.2 RTCCHG C1/C2 Charge Current Ratio RTCCHG = IC1+ / IC2+ 0.8 1.0 1.2 RTCDIS C1/C2 Discharge Current Ratio RTCDIS = IC1 / IC2 0.8 1.0 1.2 VCW1(2) C1 (C2) Cramp Voltage Width 1.0 1.3 1.6 V VFGL FG Output Low Level Voltage IFG = 3 mA 0.5 V VRDL RD Output Low Level Voltage IRD = 3 mA 0.5 V TTSD Thermal Shut Down Operating Temperature Junction temperature 150 180 C (Note 3) Design target (Note 4) TTSD Thermal Shut Down Hysteresis Temperature Junction temperature 15 C (Note 3) Design target (Note 4) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. The thermal shut down circuit is built-in for protection from damage of IC. But its operation is out of T . Design thermal calculation at normal opr operation. 4. Design target value and no measurement is made. 5. The I is a peak value of motor-current. O www.onsemi.com 2