LB11967V Single-Phase Full-Wave Pre-Driver for Variable Speed Fan Motor Overview The LB11967V is a single-phase bipolar variable speed fan motor pre-driver that works with an external PWM signal. www.onsemi.com A highly efficient, quiet and low power consumption motor driver circuit, with a large variable speed, can be implemented by adding a small number of external components. This device is optimal for driving large scale fan motors (with large air volume and large current) such as those used in servers and consumer products. Functions Pre-driver for single-phase full-wave drive PNP-EMOS is used as an external power Transistor, enabling SSOP20 (225mil) high-efficiency low-consumption drive by means of the low-saturation output and single-phase full-wave drive. (PMOS-NMOS also applicable) External PWM input enabling variable speed control Separately-excited upper direct PWM (f = 25kHz) control method, enabling highly silent speed control Compatible with 12V, 24V, and 48V power supplies Current limiter circuit incorporated XXXXXXXXXX Chopper type current limit at start YMDDD Reactive current cut circuit incorporated Reactive current before phase change is cut to enable silent and low-consumption drive. Minimum speed setting pin XXXXX = Specific Device Code Minimum speed can be set with external resistor. The start assistance circuit Y = Year enables start at extremely low speed. M = Month DDD = Additional Traceability Data Constant-voltage output pin for Hall bias Lock protection and automatic reset functions incorporated (Rotation speed detection), RD (Lock detection) output ORDERING INFORMATION Applications See detailed ordering and shipping Computing & Peripherals information on page 10 of this data sheet. Consumer Server Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: November 2016- Rev. 1 LB11967V/D LB11967V Specifications Maximum Ratings at Ta = 25C (Note1) Parameter Symbol Conditions Ratings Unit V maximum supply voltage V max 18 V CC CC OUT pin maximum output current I max 50 mA OUT OUT pin output withstand voltage V max 18 V OUT HB maximum output current I max 10 mA HB VTH input pin withstand voltage V max 8 V VTH RD/FG output pin output V /V max 18 V RD FG withstand voltage RD/FG output current I /I max 10 mA RD FG Allowable power dissipation Pd max Mounted on a specified board (Note2) 800 mW Operating temperature range Topr -30 to +95 C Storage temperature range Tstg -55 to +150 C 1. Stresses exceeding those listed in the Maximum Rating table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2. Specified board: 114.3mm 76.1mm 1.6mm, glass epoxy board. Recommended Operating Conditions at Ta = 25C (Note3) Parameter Symbol Conditions Ratings Unit V supply voltage V 6 to 16 V CC CC VTH input level voltage range VTH Full speed mode 0 to 7 V Hall input common phase input VICM 0.2 to 3 V voltage range 3. Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. Electrical Characteristics at Ta = 25C, V = 12V, unless otherwise specified. (Note4) CC Ratings Parameter Symbol Conditions Unit min typ max Circuit current I1 During drive 6 10 14 mA CC I 2 During lock protection mA CC 6 10 14 6VREG voltage 6VREG I = 5mA 5.80 6.0 6.15 V 6VREG HB voltage V I = 5mA 1.05 1.22 1.35 V HB HB VOVER voltage V I = 1mA 12.0 12.8 13.6 V VOVER VOVER CPWM-H level voltage V 4.35 4.55 4.75 V CRH CPWM-L level voltage V 1.45 1.65 1.85 V CRL CPWM oscillation frequency FPWM C = 100pF 18 25 32 kHz CT pin H level voltage V 3.4 3.6 3.8 V CTH CT pin L level voltage V 1.4 1.6 1.8 V CTL ICT pin charge current I1 V= 1.2V 1.6 2.0 2.5 A CT CT ICT pin discharge current I2 V= 4.0V 0.16 0.20 0.28 A CT CT ICT charge/discharge current ratio RCT I 1/I2 8 10 12 deg CT CT OUT-N output voltage V I = 20mA 4 10 V ON O OUT-P sink current I 15 20 mA OP Hall input sensitivity VHN Zero peak value 10 20 mV (including offset and hysteresis) RD/FG output pin L voltage V /V I /I = 5mA 0.15 0.3 V RD FG RD FG RD/FG output pin leak current I /I V /V = 16V 30 A RDL FGL RD FG 4. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2