LB1938FAGEVB ON Semiconductor

Ordering number : ENA2041 LB1938FA Monolithic Digital IC 1ch, Low-saturation LB1938FA Allowable Operating Range at Ta = 25C Parameter Symbol Conditions Ratings Unit Supply voltage V 2.2 to 10 V CC Input high-level voltage VH 2.0 to 9.5 V I Input low-level voltage VL -0.3 to +0.3 V I Electrical Characteristics at Ta = 25C, V = 3V CC Ratings Parameter Symbol Conditions Unit min typ max Circuit current I1 Standby 0.1 5 A CC I2 Forward/reverse drive 14 19 mA CC I3 Brake 20 29 mA CC Output saturation voltage Vsat1 Upper+lower I = 100mA 0.15 0.2 V O O for forward/reverse rotation Vsat2 Upper+lower I = 300mA 0.35 0.5 V O O for forward/reverse rotation Vsat3 Upper I = 100mA for braking O O 0.1 0.15 V Spark killer diode forward voltage V I = 300mA 0.9 1.7 V SF O Spark killer diode inverse current I V = 10V RS OUT 0.1 5 A Input current I V = 5V 75 98 A IN IN Thermal protection operating TSD Design target value * 180 C temperature Note *: Design target value: Measurement with a single unit not made. Package Dimensions unit : mm (typ) 3427 3.0 8 Pd max - Ta 700 600 500 Mounted on a specified board 114.3mm76.1mm1.5 mm, glass epoxy resin 400 1 2 0.65 300 0.33 0.18 208 200 100 0 -30 0 30 60 90 120 Ambient Temperature, Ta - C SANYO : Micro8 No.A2041-2/5 3.0 0.08 1.1 MAX 4.9 0.55 Allowable Power Dissipation, Pd max - mW