X-On Electronics has gained recognition as a prominent supplier of LM385BD-1.2R2G Voltage References across the USA, India, Europe, Australia, and various other global locations. LM385BD-1.2R2G Voltage References are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Voltage References, ensuring timely deliveries around the world.

LM385BD-1.2R2G ON Semiconductor

LM385BD-1.2R2G electronic component of ON Semiconductor
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Part No.LM385BD-1.2R2G
Manufacturer: ON Semiconductor
Category: Voltage References
Description: Voltage References 1.2V 10uA-20mA
Datasheet: LM385BD-1.2R2G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6764 ea
Line Total: USD 0.68 
Availability - 2883
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2883
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 0.6764
10 : USD 0.675
100 : USD 0.5153
500 : USD 0.4764
1000 : USD 0.4375
2500 : USD 0.4013
10000 : USD 0.3906
25000 : USD 0.3811
50000 : USD 0.3784

   
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LM285, LM385B Micropower Voltage Reference Diodes The LM285/LM385 series are micropower twoterminal bandgap voltage regulator diodes. Designed to operate over a wide current range of 10 A to 20 mA, these devices feature exceptionally low www.onsemi.com dynamic impedance, low noise and stable operation over time and temperature. Tight voltage tolerances are achieved by onchip MARKING trimming. The large dynamic operating range enables these devices to DIAGRAMS be used in applications with widely varying supplies with excellent regulation. Extremely low operating current make these devices ideal 8 for micropower circuitry like portable instrumentation, regulators and SOIC8 y85z other analog circuitry where extended battery life is required. ALYW D SUFFIX 8 The LM285/LM385 series are packaged in a low cost TO226 CASE 751 1 1 plastic case and are available in two voltage versions of 1.235 V and 2.500 V as denoted by the device suffix (see Ordering Information table). The LM285 is specified over a 40C to +85C temperature range while the LM385 is rated from 0C to +70C. The LM385 is also available in a surface mount plastic package in LMy85 TO92 Zxxx (TO226) voltages of 1.235 V and 2.500 V. ALYW N.C. Z SUFFIX CASE 29 Cathode Features Anode Operating Current from 10 A to 20 mA 1.0%, 1.5%, 2.0% and 3.0% Initial Tolerance Grades xxx = 1.2 or 2.5 y = 2 or 3 Low Temperature Coefficient z = 1 or 2 1.0 Dynamic Impedance A = Assembly Location L = Wafer Lot Surface Mount Package Available Y = Year These Devices are PbFree and are RoHS Compliant W = Work Week = PbFree Package (Note: Microdot may be in either location) Cathode 10 k 360 k (Bottom View) 8 1 N.C. Cathode Open 12 3 2 7 N.C. N.C. for 1.235 V 3 6 N.C. N.C. 4 5 N.C. Anode 600 k 8.45 k Standard Application 74.3 k 600 k + Open 1.5 V 3.3 k 425 k for 2.5 V Battery - 1.235 V 600 k 500 100 k LM3851.2 Anode ORDERING INFORMATION Figure 1. Representative Schematic Diagram See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: October, 2016 Rev. 9 LM285/DLM285, LM385B MAXIMUM RATINGS (T = 25C, unless otherwise noted) A Rating Symbol Value Unit Reverse Current I 30 mA R Forward Current I 10 mA F Operating Ambient Temperature Range T C A LM285 40 to +85 LM385 0 to +70 Operating Junction Temperature T +150 C J Storage Temperature Range T 65 to + 150 C stg Electrostatic Discharge Sensitivity (ESD) ESD V Human Body Model (HBM) 4000 Machine Model (MM) 400 Charged Device Model (CDM) 2000 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS (T = 25C, unless otherwise noted) A LM2851.2 LM3851.2/LM385B1.2 Min Typ Max Min Typ Max Characteristic Symbol Unit Reverse Breakdown Voltage (I I 20 mA) V V Rmin R (BR)R LM2851.2/LM385B1.2 1.223 1.235 1.247 1.223 1.235 1.247 T = T to T (Note 1) 1.200 1.270 1.210 1.260 A low high LM3851.2 1.205 1.235 1.260 T = T to T (Note 1) 1.192 1.273 A low high Minimum Operating Current I A Rmin T = 25C 8.0 8.0 A 10 15 T = T to T (Note 1) A low high 20 20 Reverse Breakdown Voltage Change with Current mV V (BR)R I I 1.0 mA, T = +25C Rmin R A 1.0 1.0 T = T to T (Note 1) 1.5 1.5 A low high 10 20 1.0 mA I 20 mA, T = +25C R A 20 25 T = T to T (Note 1) A low high Reverse Dynamic Impedance Z 0.6 0.6 I = 100 A, T = +25C R A Average Temperature Coefficient V / T ppm/C (BR) 80 80 10 A I 20 mA, T = T to T (Note 1) R A low high Wideband Noise (RMS) n V I = 100 A, 10 Hz f 10 kHz 60 60 R Long Term Stability S ppm/kHR I = 100 A, T = +25C 0.1C R A 20 20 Reverse Breakdown Voltage (I I 20 mA) V V Rmin R (BR)R LM2852.5/LM385B2.5 2.462 2.5 2.538 2.462 2.5 2.538 T = T to T (Note 1) 2.415 2.585 2.436 2.564 A low high LM3852.5 2.425 2.5 2.575 T = T to T (Note 1) 2.400 2.600 A low high Minimum Operating Current I A Rmin 13 20 13 20 T = 25C A T = T to T (Note 1) 30 30 A low high 1. T = 40C for LM2851.2, LM2852.5 low T = +85C for LM2851.2, LM2852.5 high T = 0C for LM3851.2, LM385B1.2, LM3852.5, LM385B2.5 low T =+70C for LM3851.2, LM385B1.2, LM3852.5, LM385B2.5 high www.onsemi.com 2

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8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild
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