MBD54DWT1G ON Semiconductor

MBD54DWT1G Preferred Device Dual Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount MBD54DWT1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) (EACH DIODE) A Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage (I = 10 A) V 30 V R (BR)R Total Capacitance (V = 1.0 V, f = 1.0 MHz) C 7.6 10 pF R T Reverse Leakage (V = 25 V) I 0.5 2.0 Adc R R Forward Voltage (I = 0.1 mAdc) V 0.22 0.24 Vdc F F Forward Voltage (I = 30 mAdc) V 0.41 0.5 Vdc F F Forward Voltage (I = 100 mAdc) V 0.52 1.0 Vdc F F Reverse Recovery Time (I = I = 10 mAdc, I = 1.0 mAdc) t 5.0 ns F R R(REC) rr (Figure 1) Forward Voltage (I = 1.0 mAdc) V 0.29 0.32 Vdc F F Forward Voltage (I = 10 mAdc) V 0.35 0.40 Vdc F F Forward Current (DC) I 200 mAdc F Repetitive Peak Forward Current I 300 mAdc FRM NonRepetitive Peak Forward Current (t < 1.0 s) I 600 mAdc FSM 820 +10 V 2 k 0.1 F I F t t t r p I F 100 H t t 10% 0.1 F rr DUT 90% 50 OUTPUT 50 INPUT i = 1 mA PULSE SAMPLING R(REC) I R GENERATOR OSCILLOSCOPE V R OUTPUT PULSE INPUT SIGNAL (I = I = 10 mA measured F R at i = 1 mA) R(REC) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I ) of 10 mA. F Notes: 2. Input pulse is adjusted so I is equal to 10 mA. R(peak) Notes: 3. t t p rr Figure 1. Recovery Time Equivalent Test Circuit