Switch-mode Power Rectifiers DPAK Surface Mount Package MBRD320G, MBRD330G, MBRD340G, MBRD350G, www.onsemi.com MBRD360G SCHOTTKY BARRIER These stateoftheart devices are designed for use as output rectifiers, free wheeling, protection and steering diodes in switching RECTIFIERS power supplies, inverters and other inductive switching circuits. 3.0 AMPERES, 20 60 VOLTS Features Extremely Fast Switching Extremely Low Forward Drop Platinum Barrier with Avalanche Guardrings DPAK NRVBD and SBRD Prefixes for Automotive and Other Applications CASE 369C Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable 1 4 These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant 3 Mechanical Characteristics: MARKING DIAGRAM Case: Epoxy, Molded Weight: 0.4 Gram (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal AYWW Leads are Readily Solderable B 3x0G Lead and Mounting Surface Temperature for Soldering Purposes 260C Max. for 10 Seconds ESD Ratings: A = Assembly Location* Machine Model = C Y = Year WW = Work Week Human Body Model = 3B B3x0 = Device Code x = 2, 3, 4, 5, or 6 G = PbFree Package * The Assembly Location Code (A) is front side optional. In cases where the Assembly Location is stamped in the package bottom (molding ejecter pin), the front side assembly code may be blank. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: August, 2020 Rev. 11 MBRD320/DMBRD320G, MBRD330G, MBRD340G, MBRD350G, MBRD360G MAXIMUM RATINGS MBRD/SBRD8 Rating Symbol Unit 320 330 340 350 360 Peak Repetitive Reverse Voltage V 20 30 40 50 60 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current (T = +125C) I 3 A C F(AV) Peak Repetitive Forward Current, T = +125C I 6 A C FRM (Square Wave, Duty = 0.5) Nonrepetitive Peak Surge Current I 75 A FSM (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Peak Repetitive Reverse Surge Current (2 s, 1 kHz) I 1 A RRM Operating Junction Temperature Range (Note 1) T 65 to +175 C J Storage Temperature Range T 65 to +175 C stg Voltage Rate of Change (Rated V ) dv/dt 10,000 V/ s R Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP /dT < 1/R . D J JA THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Thermal Resistance, JunctiontoCase R 6 C/W JC Maximum Thermal Resistance, JunctiontoAmbient (Note 2) R 80 C/W JA 2. Rating applies when surface mounted on the minimum pad size recommended. ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 3) V V F i = 3 Amps, T = +25C 0.6 F C i = 3 Amps, T = +125C 0.45 F C i = 6 Amps, T = +25C 0.7 F C i = 6 Amps, T = +125C 0.625 F C Maximum Instantaneous Reverse Current (Note 3) i mA R (Rated dc Voltage, T = +25C) 0.2 C (Rated dc Voltage, T = +125C) 20 C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. www.onsemi.com 2
