Surface Mount
Schottky Power Rectifier
SMB Power Surface Mount Package
MBRS240LT3G,
NRVBS240LT3G,
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NRVBS240LN
These devicesemploy the Schottky Barrier principle in a
SCHOTTKY BARRIER
metaltosilicon power rectifier. Features epitaxial construction with
RECTIFIER
oxide passivation and metal overlay contact. Ideally suited for low
2.0 AMPERES, 40 VOLTS
voltage, high frequency switching power supplies; free wheeling
diodes and polarity protection diodes.
Features
Compact Package with JBend Leads Ideal for Automated Handling
Highly Stable Oxide Passivated Junction
GuardRing for Overvoltage Protection
SMB
CASE 403A
Low Forward Voltage Drop
ESD Ratings:
MARKING DIAGRAM
Human Body Model = 3B (> 16000 V)
Machine Model = C (> 400 V)
NRVB Prefix for Automotive and Other Applications Requiring
AYWW
Unique Site and Control Change Requirements; AECQ101
2BL4
Qualified and PPAP Capable*
These are PbFree Devices
2BL4 = Specific Device Code
Mechanical Characteristics
A = Assembly Location**
Case: Molded Epoxy
Y = Year
Epoxy Meets UL 94 V0 @ 0.125 in WW = Work Week
= PbFree Package
Weight: 95 mg (Approximately)
(Note: Microdot may be in either location)
Cathode Polarity Band
**The Assembly Location code (A) is front side
Maximum Temperature of 260C/10 Seconds for Soldering
optional. In cases where the Assembly Location is
Finish: All External Surfaces Corrosion Resistant and Terminal
stamped in the package bottom (molding ejecter pin),
the front side assembly code may be blank.
Leads are Readily Solderable
ORDERING INFORMATION
Package
Device Shipping
MBRS240LT3G
SMB 2,500 /
(PbFree) Tape & Reel
NRVBS240LT3G* SMB 2,500 /
(PbFree) Tape & Reel
2,500 /
SMB
NRVBS240LNT3G*
(PbFree) Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Semiconductor Components Industries, LLC, 2013
1 Publication Order Number:
January, 2020 Rev. 9 MBRS240LT3/DMBRS240LT3G, NRVBS240LT3G, NRVBS240LN
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage V 40 V
RRM
Working Peak Reverse Voltage V
RWM
DC Blocking Voltage V
R
Average Rectified Forward Current I A
O
(At Rated V , T = 100C) 2.0
R C
Peak Repetitive Forward Current I A
FRM
(At Rated V , Square Wave, 20 kHz, T = 105C) 4.0
R C
NonRepetitive Peak Surge Current I A
FSM
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) 25
Storage Temperature T , T 55 to +150 C
stg C
Operating Junction Temperature T 55 to +150 C
J
Voltage Rate of Change dv/dt V/s
(Rated V , T = 25C) 10,000
R J
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance, JunctiontoLead (Note 1) R 18 C/W
JL
Thermal Resistance, JunctiontoAmbient (Note 2) R 78
JA
1. Mounted with minimum recommended pad size, PC Board FR4.
2. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board.
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Value Unit
V V
T = 25C T = 125C
Maximum Instantaneous Forward Voltage (Note 3) F J J
see Figure 2
0.43 0.375
(I = 2.0 A)
F
0.54 0.55
(I = 4.0 A)
F
I T = 25C T = 100C mA
Maximum Instantaneous Reverse Current (Note 3) R
J J
see Figure 4
2.0 60
(V = 40 V)
R
0.5 40
(V = 20 V)
R
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width 250 s, Duty Cycle 2.0%.
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