MC74HC10ADTR2G ON Semiconductor

MC74HC10A Triple 3-Input NAND Gate HighPerformance SiliconGate CMOS The MC74HC10A is identical in pinout to the LS10. The device inputs are compatible with Standard CMOS outputs with pullup MC74HC10A MAXIMUM RATINGS* Symbol Parameter Value Unit This device contains protection circuitry to guard against damage V DC Supply Voltage (Referenced to GND) 0.5 to + 7.0 V CC due to high static voltages or electric V DC Input Voltage (Referenced to GND) 0.5 to V + 0.5 V in CC fields. However, precautions must be taken to avoid applications of any V DC Output Voltage (Referenced to GND) 0.5 to V + 0.5 V out CC voltage higher than maximum rated I DC Input Current, per Pin 20 mA voltages to this highimpedance cir- in cuit. For proper operation, V and in I DC Output Current, per Pin 25 mA out V should be constrained to the out range GND (V or V ) V . I DC Supply Current, V and GND Pins 50 mA in out CC CC CC Unused inputs must always be P Power Dissipation in Still Air SOIC Package 500 mW D tied to an appropriate logic voltage TSSOP Package 450 level (e.g., either GND or V ). CC Unused outputs must be left open. T Storage Temperature 65 to + 150 C stg T Lead Temperature, 1 mm from Case for 10 Seconds C L (SOIC or TSSOP Package) 260 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Derating SOIC Package: 7 mW/ C from 65 to 125 C TSSOP Package: 6.1 mW/ C from 65 to 125 C RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit V DC Supply Voltage (Referenced to GND) 2.0 6.0 V CC V , V DC Input Voltage, Output Voltage (Referenced to GND) 0 V V in out CC T Operating Temperature, All Package Types 55 + 125 C A t , t Input Rise and Fall Time V = 2.0 V 0 1000 ns r f CC (Figure 1) V = 3.0 V 0 600 CC V = 4.5 V 0 500 CC V = 6.0 V 0 400 CC