MC74HC1G00DTT1G ON Semiconductor

M Single 2-Input NAND Gate MC74HC1G00 The MC74HC1G00 is a high speed CMOS 2input NAND gate fabricated with silicon gate CMOS technology. The internal circuit is composed of multiple stages, including a buffer output which provides high noise immunity and stable output. The MC74HC1G00 output drive current is 1/2 compared to www.onsemi.com MC74HC series. MARKING Features DIAGRAMS High Speed: t = 7 ns (Typ) at V = 5 V PD CC 5 Low Power Dissipation: I = 1 A (Max) at T = 25C CC A SC88A XX M High Noise Immunity DF SUFFIX CASE 419A Balanced Propagation Delays (t = t ) pLH pHL 1 Symmetrical Output Impedance (I = I = 2 mA) OH OL 6 6 Chip Complexity: < 100 FETs XX M XX AYW NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ100 TSOP5 1 1 DT SUFFIX Qualified and PPAP Capable CASE 483 Commercial NLV Prefix These Devices are PbFree, Halogen Free/BFR Free and are RoHS XX = Device Code Compliant M = Date Code* A = Assembly Location Y = Year W = Work Week 5 B 1 V CC = PbFree Package (Note: Microdot may be in either location) *Date Code orientation and/or position may vary A 2 depending upon manufacturing location. GND34 Y 5 1 XXX M SC74A Figure 1. Pinout DBV SUFFIX CASE 318BQ A & Y B XXX = Specific Device Code M = Date Code Figure 2. Logic Symbol = PbFree Package (Note: Microdot may be in either location) PIN ASSIGNMENT 1 B FUNCTION TABLE 2 A Inputs Output 3 GND 4 Y AB Y 5V CC L L H L H H H L H H H L ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 6 of this data Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: May, 2021 Rev. 14 MC74HC1G00/DMC74HC1G00 MAXIMUM RATINGS Symbol Parameter Value Unit V DC Supply Voltage SC88A (NLV), TSOP5 0.5 to +7.0 V CC SC88A, SC74A 0.5 to +6.5 V DC Input Voltage 0.5 to V +0.5 V IN CC V DC Output Voltage 0.5 to V +0.5 V OUT CC I DC Input Diode Current 20 mA IK I DC Output Diode Current 20 mA OK I DC Output Source/Sink Current 12.5 mA OUT I or I DC Supply Current per Supply Pin or Ground Pin 25 mA CC GND T Storage Temperature Range 65 to +150 C STG T Lead Temperature, 1 mm from Case for 10 Seconds 260 C L T Junction Temperature Under Bias +150 C J Thermal Resistance (Note 1) SC88A 377 C/W JA SC74A 320 P Power Dissipation in Still Air at 85CSC88A 332 mW D SC74A 390 MSL Moisture Sensitivity Level 1 F Flammability Rating Oxygen Index: 28 to 34 UL 94 V0 0.125 in R V ESD Withstand Voltage (Note 2) Human Body Model 2000 V ESD Charged Device Model 1000 I Latchup Performance (Note 3) SC88A (NLV), TSOP5 500 mA LATCHUP SC88A, SC74A 100 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Measured with minimum pad spacing on an FR4 board, using 10 mm by1 inch, 20 ounce copper trace with no air flow per JESD51 7. 2. HBM tested to ANSI/ESDA/JEDEC JS001 2017. CDM tested to JESD22 C101 F. JEDEC recommends that ESD qualification to EIA/JESD22A115A (Machine Model) be discontinued per JEDEC/JEP172A. 3. Tested to EIA/JESD78 Class II. www.onsemi.com 2