MC74HCT08ADG ON Semiconductor

MC74HCT08A Quad 2-Input AND Gate with LSTTL Compatible Inputs HighPerformance SiliconGate CMOS MC74HCT08A MAXIMUM RATINGS Symbol Parameter Value Unit This device contains protection circuitry to guard against damage V DC Supply Voltage (Referenced to GND) 0.5 to +7.0 V CC due to high static voltages or electric V DC Input Voltage (Referenced to GND) 0.5 to V +0.5 V fields. However, precautions must in CC be taken to avoid applications of any V DC Output Voltage (Referenced to GND) 0.5 to V +0.5 V out CC voltage higher than maximum rated I DC Input Current, per Pin 20 mA voltages to this highimpedance cir- in cuit. For proper operation, V and in I DC Output Current, per Pin 25 mA out V should be constrained to the out range GND (V or V ) V . I DC Supply Current, V and GND Pins 50 mA CC CC in out CC Unused inputs must always be P Power Dissipation in Still Air, SOIC Package 500 mW D tied to an appropriate logic voltage TSSOP Package 450 level (e.g., either GND or V ). CC Unused outputs must be left open. T Storage Temperature 65 to +150 C stg T Lead Temperature, 1 mm from Case for 10 Seconds C L SOIC or TSSOP Package 260 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Derating SOIC Package: 7 mW/C from 65C to 125C TSSOP Package: 6.1 mW/C from 65C to 125C RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit V DC Supply Voltage (Referenced to GND) 2.0 6.0 V CC V , V DC Input Voltage, Output Voltage 0 V V in out CC (Referenced to GND) T Operating Temperature, All Package Types 55 +125 C A t , t Input Rise and Fall Time V = 2.0 V 0 1000 ns r f CC (Figure 3) V = 4.5 V 0 500 CC V = 6.0 V 0 400 CC