MC74HCT374A Octal 3-State Noninverting D Flip-Flop with LSTTL-Compatible Inputs HighPerformance SiliconGate CMOS MC74HCT374A Design Criteria Value Units Internal Gate Count* 69 ea. Internal Gate Propagation Delay 1.5 ns Internal Gate Power Dissipation 5.0 W Speed Power Product .0075 pJ *Equivalent to a twoinput NAND gate. MAXIMUM RATINGS Symbol Parameter Value Unit This device contains protection circuitry to guard against damage V DC Supply Voltage (Referenced to GND) 0.5 to +7.0 V CC due to high static voltages or electric V DC Input Voltage (Referenced to GND) 0.5 to V + 0.5 V in CC fields. However, precautions must V DC Output Voltage (Referenced to GND) 0.5 to V + 0.5 V out CC be taken to avoid applications of any voltage higher than maximum rated I DC Input Current, per Pin 20 mA in voltages to this highimpedance cir- I DC Output Current, per Pin 35 mA out cuit. For proper operation, V and in I DC Supply Current, V and GND Pins 75 mA V should be constrained to the CC CC out range GND (V or V ) V . in out CC P Power Dissipation in Still Air, SOIC Package 500 mW D Unused inputs must always be TSSOP Package 450 tied to an appropriate logic voltage T Storage Temperature 65 to +150 C stg level (e.g., either GND or V ). CC Unused outputs must be left open. T Lead Temperature, 1 mm from Case for 10 Seconds C L (SOIC or TSSOP Package) 260 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Derating: SOIC Package: 7 mW/ C from 65 to 125 C TSSOP Package: 6.1 mW/ C from 65 to 125 C RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit V DC Supply Voltage (Referenced to GND) 4.5 5.5 V CC V , V DC Input Voltage, Output Voltage (Referenced to GND) 0 V V in out CC T Operating Temperature, All Package Types 55 +125 C A t , t Input Rise and Fall Time (Figure 1) 0 500 ns r f Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability.