M MC74VHC1GU04 Single Unbuffered Inverter The MC74VHC1GU04 is an advanced high speed CMOS Unbuffered inverter fabricated with silicon gate CMOS technology. This device consists of a single unbuffered inverter. In combination with others, or in the MC74VHCU04 Hex Unbuffered Inverter, these devices are well suited for use as oscillators, pulse shapers, and in MC74VHC1GU04 MAXIMUM RATINGS Symbol Parameter Value Unit V DC Supply Voltage 0.5 to 7.0 V CC V DC Input Voltage 0.5 to +7.0 V IN V DC Output Voltage 0.5 to V 0.5 V OUT CC I DC Input Diode Current 20 mA IK I DC Output Diode Current 20 mA OK I DC Output Sink Current 12.5 mA OUT I DC Supply Current per Supply Pin 25 mA CC T Storage Temperature Range 65 to 150 C STG T Lead Temperature, 1 mm from Case for 10 Seconds 260 C L T Junction Temperature Under Bias 150 C J Thermal Resistance SC705/SC88A (Note 1) 350 C/W JA TSOP5 230 P Power Dissipation in Still Air at 85C SC705/SC88A 150 mW D TSOP5 200 MSL Moisture Sensitivity Level 1 F Flammability Rating Oxygen Index: 28 to 34 UL 94 V0 0.125 in R V ESD Withstand Voltage Human Body Model (Note 2) 1500 V ESD Machine Model (Note 3) 200 Charged Device Model (Note 4) N/A I Latchup Performance Above V and Below GND at 125C (Note 5) 500 mA LATCHUP CC Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Measured with minimum pad spacing on an FR4 board, using 10 mmby1 inch, 2ounce copper trace with no air flow. 2. Tested to EIA/JESD22A114A. 3. Tested to EIA/JESD22A115A. 4. Tested to JESD22C101A. 5. Tested to EIA/JESD78. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit V DC Supply Voltage 2.0 5.5 V CC V DC Input Voltage 0.0 5.5 V IN V DC Output Voltage 0.0 V V OUT CC T Operating Temperature Range 55 125 C A t , t Input Rise and Fall Time V = 3.3 V 0.3 V 0 100 ns/V r f CC V = 5.0 V 0.5 V 0 20 CC Device Junction Temperature versus Time to 0.1% Bond Failures FAILURE RATE OF PLASTIC = CERAMIC Junction UNTIL INTERMETALLICS OCCUR Temperature C Time, Hours Time, Years 80 1,032,200 117.8 90 419,300 47.9 100 178,700 20.4 1 110 79,600 9.4 120 37,000 4.2 1 10 100 1000 130 17,800 2.0 TIME, YEARS 140 8,900 1.0 Figure 3. Failure Rate vs. Time Junction Temperature