MC74VHCT86ADTR2G ON Semiconductor

MC74VHCT86A Quad 2-Input XOR Gate / CMOS Logic Level Shifter with LSTTLCompatible Inputs The MC74VHCT86A is an advanced high speed CMOS 2input ExclusiveOR gate fabricated with silicon gate CMOS technology. It MC74VHCT86A MAXIMUM RATINGS Symbol Parameter Value Unit This device contains protection circuitry to guard against damage V DC Supply Voltage 0.5 to + 7.0 V CC due to high static voltages or electric V DC Input Voltage 0.5 to + 7.0 V in fields. However, precautions must be taken to avoid applications of any V DC Output Voltage V = 0 0.5 to + 7.0 V out CC voltage higher than maximum rated High or Low State 0.5 to V + 0.5 CC voltages to this highimpedance cir- cuit. For proper operation, V and I Input Diode Current 20 mA in IK V should be constrained to the out I Output Diode Current (V < GND V > V ) 20 mA OK OUT OUT CC range GND (V or V ) V . in out CC Unused inputs must always be I DC Output Current, per Pin 25 mA out tied to an appropriate logic voltage I DC Supply Current, V and GND Pins 50 mA CC CC level (e.g., either GND or V ). CC Unused outputs must be left open. P Power Dissipation in Still Air, SOIC Package 500 mW D TSSOP Package 450 T Storage Temperature 65 to + 150 C stg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Derating SOIC Package: 7 mW/ C from 65 to 125 C TSSOP Package: 6.1 mW/ C from 65 to 125 C RECOMMENDED OPERATING CONDITIONS Characteristics Symbol Min Max Unit DC Supply Voltage V 2.0 5.5 V CC DC Input Voltage V 0.0 5.5 V IN DC Output Voltage V = 0 V 0.0 5.5 V CC OUT High or Low State 0.0 V CC Operating Temperature Range T 55 +85 C A Input Rise and Fall Time V = 3.3V 0.3V t , t 0 100 ns/V CC r f V = 5.0V 0.5V 0 20 CC Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. NOISE CHARACTERISTICS (Input t = t = 3.0ns, C = 50pF, V = 5.0V, Measured in SOIC Package) r f L CC T = 25C A Typ Max Symbol Characteristic Unit V Quiet Output Maximum Dynamic V 0.3 0.8 V OLP OL V Quiet Output Minimum Dynamic V 0.3 0.8 V OLV OL V Minimum High Level Dynamic Input Voltage 3.5 V IHD V Maximum Low Level Dynamic Input Voltage 1.5 V ILD