Bridge Rectifiers, Single-Phase, MicroDIP, 1 A MDB8S Series MDB6S / MDB8S / MDB10S Description www.onsemi.com With the ever pressing need to improve power supply efficiency and reliability, the MDBxS family is focused on offering a best in class small form factor combined with best inclass efficient rectifier performance. The S family offers industry leading balance of efficiency, size, and cost. They offer designers improved efficiency by achieving an industry leading V of 0.935 V Typ. at 1 A 25C, and a V of 1.165 V F F Typ. at 5 A 25C. These lower V values offer roughly a 5% efficiency TSSOP4 F 5.0x4.4 improvement over measured competitive same form factor devices. CASE 948BS This lower V vs. competitive devices results in cooler and more F efficient power supply operation. The design supports a 30 A I rating to absorb high surge currents FSM ~ and offers rated breakdown voltages up to 1000 V. Finally, the MDBxS family achieves all this in a small form factor microdip package offering a max height of 1.6 mm, and requiring IN + 2 only 35 mm of board space. Features ~ Low Package Profile: 1.60 mm (max) 2 Small Area Requirements: 35 mm Efficient V F MARKING DIAGRAM 0.935 V (Typ) at 1 A 1.165 V (Typ) at 5 A IF(AV) = 1.0 A + IFSM = 30 A Y&Z&3 Glass Passivated Junctions MDBXS UL Certification: E352360 These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = 3Digit Data Code (Year & Week) MDBXS = Specific Device Code X = 6, 8, 10 ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2010 1 Publication Order Number: June, 2020 Rev. 3 MDB8S/DMDB8S Series ABSOLUTE MAXIMUM RATINGS (Values are at T = 25C unless otherwise noted) A Value MDB6S MDB8S MDB10S Symbol Parameter Units V Maximum Repetitive Peak Reverse Voltage 600 800 1000 V RRM V Maximum RMS Voltage 420 560 700 V RMS V Maximum DC Blocking Voltage 600 800 1000 V DC I Average Rectified Forward Current (Note 1) 1.0 A F(AV) I Peak Forward Surge Current (Note 2) 30 A FSM 2 2 2 I t I t Rating for fusing (t < 8.3 ms) 3.735 A S T Operating Junction Temperature Range 55 to +150 C J T Storage Temperature Range 55 to +150 C STG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. 60 Hz sine wave, Rload, TA = 25C on FR4 PCB. 2. 60 Hz sine wave, Nonrepetitive 1 cycle peak value, TJ = 25C. THERMAL CHARACTERISTICS (Note 3) Symbol Parameter Value Typ. Units R Thermal Resistance, Junction to Ambient Measurement with Dual Dice 250 C/W JA Measurement with Single Die 150 C/W JL Thermal Characterization Junction to Lead Pin 2 57 C/W Pin 1, 3, 4 15 C/W 3. Device mounted on FR4 PCB with board size = 76.2 mm x 114.3 mm (JESD513 standards). ELECTRICAL CHARACTERISTICS (Values are at T = 25C unless otherwise specified) A Symbol Parameter Conditions Value Unit V Maximum Forward Voltage I = 1 A, 1.1 V F F Pulse measurement, Per diode I Maximum Reverse Current 10 A At V R RRM, Pulse measurement, Per diode C Typical Junction Capacitance VR = 4 V, f = 1 MHz 10 pF J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Part Number Marking Package Shipping MDB6S MDB6S TSSOP4 5.0x4.4 / MicroDIP 5000 / Tape & Reel MDB8S MDB8S MDB10S MDB10S www.onsemi.com 2