MM3Z68VT1G ON Semiconductor

DATA SHEET www.onsemi.com Zener Voltage Regulators 300 mW SOD323 Surface Mount MM3ZxxxT1G Series, SOD323 CASE 477 SZMM3ZxxxT1G Series STYLE 1 This series of Zener diodes is packaged in a SOD323 surface mount package that has a power dissipation of 300 mW. They are 1 2 designed to provide voltage regulation protection and are especially Cathode Anode attractive in situations where space is at a premium. They are well suited for applications such as cellular phones, hand held portables, MARKING DIAGRAM and high density PC boards. Specification Features: Standard Zener Breakdown Voltage Range 2.4 V to 75 V xx Steady State Power Rating of 300 mW Small Body Outline Dimensions: 0.067 x 0.049 (1.7 mm x 1.25 mm) xx = Specific Device Code Low Body Height: 0.035 (0.9 mm) M = Date Code* Package Weight: 4.507 mg/Unit = PbFree Package ESD Rating of Class 3 (> 16 kV) per Human Body Model (Note: Microdot may be in either location) SZ Prefix for Automotive and Other Applications Requiring Unique *Date Code orientation may vary depending upon manufacturing location. Site and Control Change Requirements AECQ101 Qualified and PPAP Capable These are PbFree Devices* ORDERING INFORMATION Mechanical Characteristics: Device Package Shipping CASE: Void-free, Transfer-Molded Plastic MM3ZxxxT1G, SOD323 3,000 / SZMM3ZxxxT1G (PbFree) Tape & Reel FINISH: All External Surfaces are Corrosion Resistant MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: MM3ZxxxT3G, SOD323 10,000 / 260C for 10 Seconds SZMM3ZxxxT3G (PbFree) Tape & Reel LEADS: Plated with PbSn or Sn Only (PbFree) For information on tape and reel specifications, POLARITY: Cathode Indicated by Polarity Band including part orientation and tape sizes, please FLAMMABILITY RATING: UL 94 V0 refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. MOUNTING POSITION: Any DEVICE MARKING INFORMATION MAXIMUM RATINGS See specific marking information in the device marking Rating Symbol Max Unit column of the Electrical Characteristics table on page 2 of this data sheet. Total Device Dissipation FR4 Board, P D (Note 1) T = 25C 300 mW A Derate above 25C 2.4 mW/C Thermal Resistance, JunctiontoAmbient R 416 C/W JA Junction and Storage Temperature Range T , T 65 to +150 C J stg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 1. FR4 printed circuit board, singlesided copper, mounting pad 1 cm . *For additional information on our PbFree strategy and soldering details, please download the onsemi Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: December, 2021 Rev. 13 MM3Z2V4T1/D MMM3ZxxxT1G Series, SZMM3ZxxxT1G Series ELECTRICAL CHARACTERISTICS I Symbol Parameter I F V Reverse Zener Voltage I Z ZT I Reverse Current ZT Z Maximum Zener Impedance I ZT ZT I Reverse Current ZK V V Z R V Z Maximum Zener Impedance I ZK ZK I V R F I ZT I Reverse Leakage Current V R R V Reverse Voltage R I Forward Current F V Forward Voltage I F F V Maximum Temperature Coefficient of V Z Z C Max. Capacitance V = 0 and f = 1 MHz Zener Voltage Regulator R ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted, V = 0.9 V Max. I = 10 mA for all types) A F F Zener Voltage (Note 2) Zener Impedance Leakage Current V C Z Z V = 0 ZT (mV/k) R I V (Volts) I Z I I V I f = 1 MHz ZT Z ZT ZK ZK R R ZT Device Marking Min Nom Max mA mA Volts Min Max pF Device* A MM3Z2V4T1G 00 2.2 2.4 2.6 5 100 1000 0.5 50 1.0 3.5 0 450 MM3Z2V7T1G 01 2.5 2.7 2.9 5 100 1000 0.5 20 1.0 3.5 0 450 MM3Z3V0T1G 02 2.8 3.0 3.2 5 100 1000 0.5 10 1.0 3.5 0 450 MM3Z3V3T1G 05 3.1 3.3 3.5 5 95 1000 0.5 5 1.0 3.5 0 450 MM3Z3V6T1G 06 3.4 3.6 3.8 5 90 1000 0.5 5 1.0 3.5 0 450 MM3Z3V9T1G 07 3.7 3.9 4.1 5 90 1000 0.5 3 1.0 3.5 2.5 450 MM3Z4V3T1G 08 4.0 4.3 4.6 5 90 1000 0.5 3 1.0 3.5 0 450 MM3Z4V7T1G 09 4.4 4.7 5.0 5 80 800 0.5 3 2.0 3.5 0.2 260 MM3Z5V1T1G 0A 4.8 5.1 5.4 5 60 500 0.5 2 2.0 2.7 1.2 225 MM3Z5V6T1G 0C 5.2 5.6 6.0 5 40 200 0.5 1 2.0 2.0 2.5 200 MM3Z6V2T1G 0E 5.8 6.2 6.6 5 10 100 0.5 3 4.0 0.4 3.7 185 MM3Z6V8T1G 0F 6.4 6.8 7.2 5 15 160 0.5 2 4.0 1.2 4.5 155 MM3Z7V5T1G 0G 7.0 7.5 7.9 5 15 160 0.5 1 5.0 2.5 5.3 140 MM3Z8V2T1G 0H 7.7 8.2 8.7 5 15 160 0.5 0.7 5.0 3.2 6.2 135 MM3Z9V1T1G 0K 8.5 9.1 9.6 5 15 160 0.5 0.2 7.0 3.8 7.0 130 MM3Z10VT1G 0L 9.4 10 10.6 5 20 160 0.5 0.1 8.0 4.5 8.0 130 MM3Z11VT1G 0M 10.4 11 11.6 5 20 160 0.5 0.1 8.0 5.4 9.0 130 MM3Z12VT1G 0N 11.4 12 12.7 5 25 80 0.5 0.1 8.0 6.0 10 130 MM3Z13VT1G 0P 12.4 13.25 14.1 5 30 80 0.5 0.1 8.0 7.0 11 120 MM3Z15VT1G 0T 14.3 15 15.8 5 30 80 0.5 0.05 10.5 9.2 13 110 MM3Z16VT1G 0U 15.3 16.2 17.1 5 40 80 0.5 0.05 11.2 10.4 14 105 MM3Z18VT1G 0W 16.8 18 19.1 5 45 80 0.5 0.05 12.6 12.4 16 100 MM3Z20VT1G 0Z 18.8 20 21.2 5 55 100 0.5 0.05 14.0 14.4 18 85 MM3Z22VT1G 10 20.8 22 23.3 5 55 100 0.5 0.05 15.4 16.4 20 85 MM3Z24VT1G 11 22.8 24.2 25.6 5 70 120 0.5 0.05 16.8 18.4 22 80 MM3Z27VT1G 12 25.1 27 28.9 2 80 300 0.5 0.05 18.9 21.4 25.3 70 MM3Z30VT1G 14 28 30 32 2 80 300 0.5 0.05 21.0 24.4 29.4 70 MM3Z33VT1G 18 31 33 35 2 80 300 0.5 0.05 23.2 27.4 33.4 70 MM3Z36VT1G 19 34 36 38 2 90 500 0.5 0.05 25.2 30.4 37.4 70 MM3Z39VT1G 20 37 39 41 2 130 500 0.5 0.05 27.3 33.4 41.2 45 MM3Z43VT1G 21 40 43 46 2 150 500 0.5 0.05 30.1 37.6 46.6 40 MM3Z47VT1G 1A 44 47 50 2 170 500 0.5 0.05 32.9 42.0 51.8 40 MM3Z51VT1G 1C 48 51 54 2 180 500 0.5 0.05 35.7 46.6 57.2 40 MM3Z56VT1G 1D 52 56 60 2 200 500 0.5 0.05 39.2 52.2 63.8 40 MM3Z62VT1G 2A 58 62 66 2 215 500 0.5 0.05 43.4 58.9 71.8 35 MM3Z68VT1G 1F 64 68 72 2 240 500 0.5 0.05 47.6 65.6 79.8 35 MM3Z75VT1G 1G 70 75 79 2 255 500 0.5 0.05 52.5 73.4 88.6 35 *Includes SZ-prefix devices where applicable. 2. Zener voltage is measured with a pulse test current I at an ambient temperature of 25C. Z www.onsemi.com 2