MMBZ5221B - MMBZ5257B Zener Diodes
November 2015
MMBZ5221B - MMBZ5257B
Zener Diodes
Tolerance = 5%
CONNECTION
3
DIAGRAM
3
2
1
1 2 NC
SOT-23
(1, 2)
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T = 25C unless otherwise noted.
A
Symbol Parameter Value Unit
Referencing R , T = 25C 250
JA A
P Power Dissipation mW
D
Referencing , T = 25C 550
JL L
(3)
R Junction-to-Ambient Thermal Resistance 465 C/W
JA
Junction-to-Lead Thermal Characteristics
220 C/W
JL
(with reference to Cathode)
T Storage Temperature Range -55 to +150 C
STG
T Operating Junction Temperature +150 C
J
Note:
1.These ratings are based on a maximum junction temperature of 150C.
2.These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
3. Device mounted on FR-4 PCB, board size = 76.2 mm x 114.3 mm
2004 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBZ5221B - MMBZ5257B Rev. 1.5MMBZ5221B - MMBZ5257B Zener Diodes
Electrical Characteristics
Values are at T = 25C unless otherwise noted.
A
V (V) @ I (mA)
Z Z
Device Mark Z () @ I (mA) Z () @ I (mA) I (A) @ V (V)
Z Z ZK ZK R R
Min. Nor. Max. I (mA)
Z
MMBZ5221B 18A 2.28 2.4 2.52 20 30 20 1,200 0.25 100 1.0
MMBZ5223B 18C 2.565 2.7 2.835 20 30 20 1,300 0.25 75 1.0
MMBZ5226B 8A 3.135 3.3 3.465 20 28 20 1,600 0.25 25 1.0
MMBZ5227B 8B 3.42 3.6 3.78 20 24 20 1,700 0.25 15 1.0
MMBZ5228B 8C 3.705 3.9 4.095 20 23 20 1,900 0.25 10 1.0
MMBZ5229B 8D 4.085 4.3 4.515 20 22 20 1,000 0.25 5.0 1.0
MMBZ5230B 8E 4.465 4.7 4.935 20 19 20 1,900 0.25 5.0 2.0
MMBZ5231B 8F 4.845 5.1 5.355 20 17 20 1,600 0.25 5.0 2.0
MMBZ5232B 8G 5.32 5.6 5.88 20 11 20 1,600 0.25 5.0 3.0
MMBZ5233B 8H 5.7 6.0 6.3 20 7.0 20 1,600 0.25 5.0 3.5
MMBZ5234B 8J 5.89 6.2 6.51 20 7.0 20 1,000 0.25 5.0 4.0
MMBZ5235B 8K 6.46 6.8 7.14 20 5.0 20 750 0.25 3.0 5.0
MMBZ5236B 8L 7.125 7.5 7.875 20 6.0 20 500 0.25 3.0 6.0
MMBZ5237B 8M 7.79 8.2 8.61 20 8.0 20 500 0.25 3.0 6.5
MMBZ5238B 8N 8.265 8.7 9.135 20 8.0 20 600 0.25 3.0 6.5
MMBZ5239B 8P 8.645 9.1 9.555 20 10 20 600 0.25 3.0 7.0
MMBZ5240B 8Q 9.5 10 10.5 20 17 20 600 0.25 3.0 8.0
MMBZ5241B 8R 10.45 11 11.55 20 22 20 600 0.25 2.0 8.4
MMBZ5242B 8S 11.4 12 12.6 20 30 20 600 0.25 1.0 9.1
MMBZ5243B 8T 12.35 13 13.65 9.5 13 9.5 600 0.25 0.5 9.9
MMBZ5244B 8U 13.3 14 14.7 9.0 15 9.0 600 0.25 0.1 10
MMBZ5245B 8V 14.25 15 15.75 8.5 16 8.5 600 0.25 0.1 11
MMBZ5246B 8W 15.2 16 16.8 7.8 17 7.8 600 0.25 0.1 12
MMBZ5247B 8X 16.15 17 17.85 7.4 19 7.4 600 0.25 0.1 13
MMBZ5248B 8Y 17.1 18 18.9 7.0 21 7.0 600 0.25 0.1 14
MMBZ5249B 8Z 18.05 19 19.95 6.6 23 6.6 600 0.25 0.1 14
MMBZ5250B 81A 19 20 21 6.2 25 6.2 600 0.25 0.1 15
MMBZ5251B 81B 20.9 22 23.1 5.6 29 5.6 600 0.25 0.1 17
MMBZ5252B 81C 22.8 24 25.2 5.2 33 5.2 600 0.25 0.1 18
MMBZ5253B 81D 23.75 25 26.25 5.0 35 5.0 600 0.25 0.1 19
MMBZ5254B 81E 25.65 27 28.35 4.6 41 4.6 600 0.25 0.1 21
MMBZ5255B 81F 26.6 28 29.4 4.5 44 4.5 600 0.25 0.1 21
MMBZ5256B 81G 28.5 30 31.5 4.2 49 4.2 600 0.25 0.1 23
MMBZ5257B 81H 31.35 33 34.65 3.8 58 3.8 600 0.25 0.1 25
V Forward Voltage = 0.9 V Maximum at I = 10 mA for all MMBZ5200 series
F F
2004 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBZ5221B - MMBZ5257B Rev. 1.5 2