MMSZ5252ET1G ON Semiconductor

MMSZ52xxET1G Series, SZMMSZ52xxET1G Series Zener Voltage Regulators 500 mW SOD123 Surface Mount Three complete series of Zener diodes are offered in the convenient, MMSZ52xxET1G Series, SZMMSZ52xxET1G Series ELECTRICAL CHARACTERISTICS (T = 25C unless A I otherwise noted, V = 0.95 V Max. I = 10 mA) F F I F Symbol Parameter V Reverse Zener Voltage I Z ZT I Reverse Current ZT V V Z Maximum Zener Impedance I Z R ZT ZT V I V R F I Reverse Current I ZK ZT Z Maximum Zener Impedance I ZK ZK I Reverse Leakage Current V R R V Reverse Voltage R I Forward Current F Zener Voltage Regulator V Forward Voltage I F F ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted, V = 0.9 V Max. I = 10 mA) A F F Zener Voltage (Notes 4 and 5) Zener Impedance (Note 6) Leakage Current V (V) I Z I Z I I V Z ZT ZT ZT ZK ZK R R Device Marking Min Nom Max mA mA A V Device* MMSZ5221ET1G CA1 2.28 2.4 2.52 20 30 1200 0.25 100 1 MMSZ5223ET1G CA3 2.57 2.7 2.84 20 30 1300 0.25 75 1 MMSZ5226ET1G CA6 3.14 3.3 3.47 20 28 1600 0.25 25 1 MMSZ5228ET1G CA8 3.71 3.9 4.10 20 23 1900 0.25 10 1 MMSZ5229ET1G CA9 4.09 4.3 4.52 20 22 2000 0.25 5 1 MMSZ5231ET1G CB2 4.85 5.1 5.36 20 17 1600 0.25 5 2 MMSZ5232ET1G CB3 5.32 5.6 5.88 20 11 1600 0.25 5 3 MMSZ5234ET1G CB5 5.89 6.2 6.51 20 7 1000 0.25 5 4 MMSZ5235ET1G CB6 6.46 6.8 7.14 20 5 750 0.25 3 5 MMSZ5236ET1G CB7 7.13 7.5 7.88 20 6 500 0.25 3 6 MMSZ5237ET1G CB8 7.79 8.2 8.61 20 8 500 0.25 3 6.5 MMSZ5240ET1G CC2 9.50 10 10.50 20 17 600 0.25 3 8 MMSZ5242ET1G CC4 11.40 12 12.60 20 30 600 0.25 1 9.1 MMSZ5243ET1G CC5 12.35 13 13.65 9.5 13 600 0.25 0.5 9.9 MMSZ5244ET1G CC6 13.30 14 14.70 9.0 15 600 0.25 0.1 10 MMSZ5245ET1G CC7 14.25 15 15.75 8.5 16 600 0.25 0.1 11 MMSZ5246ET1G CC8 15.20 16 16.80 7.8 17 600 0.25 0.1 12 MMSZ5248ET1G CD1 17.10 18 18.90 7.0 21 600 0.25 0.1 14 MMSZ5250ET1G CD3 19.00 20 21.00 6.2 25 600 0.25 0.1 15 MMSZ5252ET1G CD5 22.80 24 25.20 5.2 33 600 0.25 0.1 18 4. The type numbers shown have a standard tolerance of 5% on the nominal Zener voltage. 5. Nominal Zener voltage is measured with the device junction in thermal equilibrium at T = 30C 1C. L 6. Z and Z are measured by dividing the AC voltage drop across the device by the ac current applied. ZT ZK The specified limits are for I = 0.1 I with the AC frequency = 1 kHz. Z(AC) Z(dc) *Include SZ-prefix devices where applicable