MPS2907A Series
General Purpose
Transistors
PNP Silicon
MPS2907A Series
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)
A
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (Note 1) (I = 10 mAdc, I = 0) V 60 Vdc
C B (BR)CEO
Collector Base Breakdown Voltage (I = 10 Adc, I = 0) V 60 Vdc
C E (BR)CBO
Emitter Base Breakdown Voltage (I = 10 Adc, I = 0) V 5.0 Vdc
E C (BR)EBO
Collector Cutoff Current (V = 30 Vdc, V = 0.5 Vdc) I 50 nAdc
CE EB(off) CEX
Collector Cutoff Current I Adc
CBO
(V = 50 Vdc, I = 0) 0.01
CB E
(V = 50 Vdc, I = 0, T = 150C) 10
CB E A
Base Current (V = 30 Vdc, V = 0.5 Vdc) I 50 nAdc
CE EB(off) B
ON CHARACTERISTICS
DC Current Gain h
FE
(I = 0.1 mAdc, V = 10 Vdc) 75
C CE
(I = 1.0 mAdc, V = 10 Vdc) 100
C CE
(I = 10 mAdc, V = 10 Vdc) 100
C CE
(I = 150 mAdc, V = 10 Vdc) (Note 1) 100 300
C CE
(I = 500 mAdc, V = 10 Vdc) (Note 1) 50
C CE
Collector Emitter Saturation Voltage (Note 1) V Vdc
CE(sat)
(I = 150 mAdc, I = 15 mAdc) 0.4
C B
(I = 500 mAdc, I = 50 mAdc) 1.6
C B
Base Emitter Saturation Voltage (Note 1) V Vdc
BE(sat)
(I = 150 mAdc, I = 15 mAdc) 1.3
C B
(I = 500 mAdc, I = 50 mAdc) 2.6
C B
SMALLSIGNAL CHARACTERISTICS
Current Gain Bandwidth Product (Notes 1 and 2), f 200 MHz
T
(I = 50 mAdc, V = 20 Vdc, f = 100 MHz)
C CE
Output Capacitance (V = 10 Vdc, I = 0, f = 1.0 MHz) C 8.0 pF
CB E obo
Input Capacitance (V = 2.0 Vdc, I = 0, f = 1.0 MHz) C 30 pF
EB C ibo
SWITCHING CHARACTERISTICS
TurnOn Time (V = 30 Vdc, I = 150 mAdc, t 45 ns
CC C on
I = 15 mAdc) (Figures 1 and 5)
B1
Delay Time t 10 ns
d
Rise Time t 40 ns
r
Turn Off Time (V = 6.0 Vdc, I = 150 mAdc, t 100 ns
CC C off
I = I = 15 mAdc) (Figure 2)
B1 B2
Storage Time t 80 ns
s
Fall Time t 30 ns
f
1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.
2. f is defined as the frequency at which |h | extrapolates to unity.
T fe