MURH840CTG Power Rectifier Features and Benefits Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity www.onsemi.com 175C Operating Junction Temperature 8 A Total (4 A Per Diode Leg) ULTRAFAST RECTIFIER These are PbFree Devices* 8.0 AMPERES, 400 VOLTS Applications t = 28 ns rr Power Supply Output Rectification Power Management 1 Instrumentation 2, 4 3 Mechanical Characteristics Case: Epoxy, Molded 4 Epoxy Meets UL 94 V0 0.125 in Weight: 1.9 Grams (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal TO220AB Leads are Readily Solderable CASE 221A Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds ESD Rating: Human Body Model 3B 1 2 Machine Model C 3 MARKING DIAGRAM AYWW UH840G AKA A = Assembly Location Y = Year WW = Work Week UH840 = Device Code G = PbFree Package AKA = Diode Polarity ORDERING INFORMATION Device Package Shipping *For additional information on our PbFree strategy and soldering details, please MURH840CTG TO220 50 Units/Rail download the ON Semiconductor Soldering and Mounting Techniques (PbFree) Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: January, 2015 Rev. 7 MURH840CT/DMURH840CTG MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 400 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I A F(AV) (T = 155C) Per Leg 4.0 C Total Device 8.0 Peak Repetitive Forward Current per Diode Leg I 8.0 A FM (Square Wave, 20 kHz, T = 149C) C NonRepetitive Peak Surge Current I 100 A FSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Controlled Avalanche Energy W 20 mJ AVAL Operating Junction and Storage Temperature Range T , T 65 to +175 C J stg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Conditions Symbol Max Unit Maximum Thermal Resistance, JunctiontoCase Min. Pad R 3.0 C/W JC Maximum Thermal Resistance, JunctiontoAmbient Min. Pad 60 R JA ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Typical Max Unit Maximum Instantaneous Forward Voltage (Note 1) v V F (i = 4.0 A, T = 150C) 1.12 1.9 F j (i = 4.0 A, T = 25C) 1.45 2.2 F j Maximum Instantaneous Reverse Current (Note 1) i A R (Rated dc Voltage, T = 150C) 300 500 j (Rated dc Voltage, T = 25C) 4.0 10 j Maximum Reverse Recovery Time t ns rr (I = 1.0 A, di/dt = 50 A/ s) 28 F 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. 100 100 175C 175C 150C 150C 25C 25C 10 10 100C 100C 1.0 1.0 0.1 0.1 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 4.2 4.6 5.0 V , INSTANTANEOUS FORWARD VOLTAGE (V) V , INSTANTANEOUS FORWARD VOLTAGE (V) F F Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage www.onsemi.com 2 I , INSTANTANEOUS FORWARD CURRENT (A) F I , INSTANTANEOUS FORWARD CURRENT (A) F