NCP3985SN25T1G ON Semiconductor

NCP3985 Micropower, 150 mA Low-Noise, High PSRR, Ultra-Low Dropout BiCMOS Voltage Regulator NCP3985 V in V out Bandgap Current Reference Limit Voltage C noise CE Active Discharge GND Figure 2. Simplified Block Diagram PIN FUNCTION DESCRIPTION Pin No. Pin Name Description 1 V Power Supply Input Voltage in 2 GND Power Supply Ground 3 CE Chip Enable: This pin allows on/off control of the regulator. To disable the device, connect to GND. If this function is not in use, connect to V . Internal 5 M Pull Down resistor is connected in between CE and GND. 4 C Noise reduction pin. (Connect 100 nF or 10 nF capacitor to GND) noise 5 V Regulated Output Voltage out MAXIMUM RATINGS Rating Symbol Value Unit Input Voltage (Note 1) V -0.3 V to 6 V V in Chip Enable Voltage V -0.3 V to V +0.3 V V CE in Noise Reduction Voltage V -0.3 V to V +0.3 V V Cnoise in Output Voltage V -0.3 V to V +0.3 V V out in Maximum Junction Temperature (Note 1) T 150 C J(max) Storage Temperature Range T -55 to 150 C STG Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. NOTE: This device series contains ESD protection and exceeds the following tests: Human Body Model 2000 V per MIL-STD-883, Method 3015 Machine Model Method 200 V THERMAL CHARACTERISTICS Rating Symbol Value Unit Package Thermal Resistance: (Note 1) R C/W JA Junction-to-Lead (pin 5) 109 Junction-to-Ambient 220 1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area