DATA SHEET www.onsemi.com ecoSwitch R TYP V V I ON CC IN MAX 13.5 m 4.5 V 3 V 7 A Advanced Load Management Controlled Load Switch with Reverse Current Protection and Low R 1 ON DFN12, 3x3 CASE 506EN NCP45780 The NCP45780 load management device provides a component and areareducing solution for efficient power domain switching with MARKING DIAGRAM inrush current limit via soft start. These devices are designed to integrate control and driver functionality with backtoback high 780 performance low onresistance power MOSFETs in a single package. ALYW This cost effective solution is ideal for reverse current applications and the specific power management and disconnect functions used in USB TypeC and TypeC Power Delivery ports. 780 = Specific Device Code A = Assembly Location Features L = Wafer Lot Advanced Controller with Charge Pump YW = Year / Week Integrated NChannel MOSFET with Low R = PbFree Package ON SoftStart via Controlled Slew Rate Adjustable Slew Rate Control PIN CONFIGURATION Fault Detection with Power Good Output Thermal Shutdown and Under Voltage Lockout SR 1 12 PG ShortCircuit and Adjustable OverCurrent Protections 2 11 OCP NC 13: V OUT Reversecurrent Protection V 3 10 V SS Input Voltage Range 3 V to 24 V OUT Extremely Low Standby Current 4 9 V V IN CC This is a Pbfree Device 14: V IN NC EN 5 8 Typical Applications NC 6 7 V IN USB Type C Power Delivery Reverse Current Load Switching Applications (Top View) Notebook and Tablet Computers Telecom, Networking, Medical and Industrial Equipment ORDERING INFORMATION SetTop Boxes, Servers and Gateways Device Package Shipping HotSwap Devices and Peripheral Ports V NCP45780IMN24RTWG DFN12 3000 / Tape CC EN OCP PG V IN & Reel Thermal Bandgap Control Shutdown, & Logic Biases UVLO, & OCP Delay and Charge Slew Rate Pump Control SR V V SS OUT Figure 1. Block Diagram Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: April, 2022 Rev. 1 NCP45780/DNCP45780 Table 1. PIN DESCRIPTION Pin Name Function 1 SR Slew Rate control pin. Slew rate adjustment made with an external capacitor to GND float if not used. 3,13 V Source of MOSFET connected to load. Pin 16 should be used for high current (>0.5 A) OUT 4,7,14 V Input voltage (3 V 24 V) Pin 13 should be used for high current (>0.5 A) IN 8 EN Activehigh digital input used to turn on the MOSFET driver, pin has an internal pull down resistor to GND. 9 V Driver supply voltage (3.0 V 5.5 V) CC 10 V Driver ground SS 11 OCP Overcurrent protection trip point adjustment made with a voltage applied (0 V 1.2 V), pin has an internal pull up resistor to EN short to ground if overcurrent protection is not needed. 12 PG Activehigh, opendrain output that indicates when the gate of the MOSFET is fully charged, external pull up resistor 100 k to an external voltage source required tie to GND if not used. Table 2. ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Supply Voltage Range V 0.3 to 6 V CC Input Voltage Range V 0.3 to 30 V IN Output Voltage Range V 0.3 to 30 V OUT EN Input Voltage Range V 0.3 to (V + 0.3) V EN CC PG Output Voltage Range (Note 1) V 0.3 to 6 V PG OCP Input Voltage Range V 0.3 to 6 V OCP Thermal Resistance, JunctiontoAmbient, Steady State (Note 2) R 176.16 C/W JA Thermal Resistance, JunctiontoCase (V Paddle) R 2.5 C/W IN JC Continuous MOSFET Current T = 25C (Note 2) I 20 A A MAX Total Power Dissipation T = 25C (Note 2) P 3.49 W A D Derate above T = 25C 34.9 mW/C A Storage Temperature Range T 55 to 150 C STG Lead Temperature, Soldering (10 sec.) T 260 C SLD ESD Capability, Human Body Model (Notes 3, 4) ESD 2 kV HBM ESD Capability, Charged Device Model (Notes 3, 4) ESD 1 kV CDM Latchup Current Immunity (Note 3) LU 100 mA Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. PG is an open drain output that requires an external pullup resistor > 100 k to an external voltage source. 2. Surfacemounted on FR4 board using the minimum recommended pad size, 1 oz Cu. Over current protection will limit maximum realized current to 12.5 A at highest setting. 3. Tested by the following methods T = 25C: A ESD Human Body Model tested per JESD22 A114 ESD Charged Device Model per ESD STM5.3.1 Latchup Current tested per JESD78 4. Rating is for all pins except for V and V which are tied to the internal MOSFETs Drain and Source. Typical MOSFET ESD performance IN OUT for V and V should be expected and these devices should be treated as ESD sensitive. IN OUT www.onsemi.com 2