NCP583SQ28T1G ON Semiconductor

NCP583 Ultra-Low Iq 150 mA CMOS LDO Regulator with Enable The NCP583 series of low dropout regulators are designed for portable battery powered applications which require precise output voltage accuracy and low quiescent current. These devices feature an enable function which lowers current consumption significantly and www.onsemi.com are offered in two small packages SC82AB and the SOT563. A 1.0 F ceramic capacitor is the recommended value to be used MARKING with these devices on the output pin. DIAGRAMS Features SC82AB UltraLow Dropout Voltage of 250 mV at 150 mA SQ SUFFIX 4 Excellent Line Regulation of 0.05%/V CASE 419C 1 Excellent Load Regulation of 20 mV 1 High Output Voltage Accuracy of 2% UltraLow Iq Current of 1.0 A SOT563 Very Low Shutdown Current of 0.1 A XXX 6 XV SUFFIX Wide Output Voltage Range of 1.5 V to 3.3 V XTT CASE 463A 1 Low Temperature Drift Coefficient on the Output Voltage of 1 100 ppm/C X = Device Code Fold Back Protection Circuit T = Traceability Information Input Voltage up to 6.5 V These are PbFree Devices ORDERING INFORMATION Typical Applications See detailed ordering and shipping information in the package dimensions section on page 8 of this data sheet. Portable Equipment HandHeld Instrumentation Camcorders and Cameras V V in out - + V ref Current Limit CE GND Figure 1. Simplified Block Diagram Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: January, 2016 Rev. 15 NCP583/D XX TTNCP583 PIN FUNCTION DESCRIPTION SOT563 Pin SC82AB Pin Symbol Description 1 4 Power supply input voltage. V in 2 2 GND Power supply ground. 3 3 Regulated output voltage. V out 4 NC No connect. 5 GND Power supply ground. 6 1 CE Chip enable pin. MAXIMUM RATINGS Rating Symbol Value Unit Input Voltage V 6.5 V in Input Voltage (CE Pin) V 6.5 V CE Output Voltage V 0.3 to V +0.3 V out in Output Current I 180 mA out Thermal Junction Resistance R C/W JA SC82AB 263 SOT563 200 ESD Capability, Human Body Model, C = 100 pF, R = 1.5 k ESD 2000 V HBM ESD Capability, Machine Model, C = 200 pF, R = 0 ESD 200 V MM Operating Ambient Temperature Range T 40 to +85 C A Maximum Junction Temperature T 125 C J(max) Storage Temperature Range T 55 to +150 C stg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS (V = V + 1.0 V, T = 40C to +85C, unless otherwise noted.) in out A Characteristic Symbol Min Typ Max Unit Input Voltage V 1.7 6.0 V in Output Voltage (1.0 A I 30 mA) V V x 0.98 V x 1.02 V out out out out Line Regulation (I = 30 mA) Reg 0.05 0.20 %/V out line (V + 0.5 V Vin 6.0 V) out Load Regulation (1.0 A I 150 mA) Reg 20 40 mV out load Dropout Voltage (I = 150 mA) V V out DO V = 1.5 V 0.60 0.90 out 1.7 V V 1.9 V 0.50 0.75 out 2.1 V V 2.7 V 0.35 0.55 out 2.8 V V 3.3 V 0.25 0.40 out Quiescent Current (I = 0 mA) Iq 1.0 1.5 A out Output Current I 150 mA out Shutdown Current (V = Gnd) I 0.1 1.0 A CE SD Output Short Circuit Current (V = 0) I 40 mA out lim Enable Input Threshold Voltage High 1.2 6.0 V Vth enh Enable Input Threshold Voltage Low 0 0.3 Vth enl Output Voltage Temperature Coefficient V T 100 ppm/C out/ (I = 30 mA, 40C T 85C) out A www.onsemi.com 2