NCP662SQ18T1G ON Semiconductor

xxxM xxxM NCP662, NCV662, NCP663, NCV663 Voltage Regulator - CMOS, Low Iq, Low-Dropout 100 mA NCP662, NCV662, NCP663, NCV663 ON GND Enable GND N/C OFF Input Output Input Output V V V V in out in out + + + + C1 C2 C1 C2 This device contains 28 active transistors This device contains 28 active transistors Figure 1. NCP662/NCV662 Typical Application Figure 2. NCP663/NCV663 Typical Application Diagram Diagram PIN FUNCTION DESCRIPTION NCP662/ NCP663/ NCV662 NCV663 Pin Name Description 1 1 GND Power supply ground. 2 2 Vin Positive power supply input voltage. 3 3 Vout Regulated output voltage. 4 Enable This input is used to place the device into low power standby. When this input is pulled low, the device is disabled. If this function is not used, Enable should be connected to Vin. 4 N/C No internal connection. MAXIMUM RATINGS Rating Symbol Value Unit Input Voltage V 6.0 V in Enable Voltage (NCP662/NCV662 ONLY) Enable 0.3 to V +0.3 V in Output Voltage V 0.3 to V +0.3 V out in Power Dissipation and Thermal Characteristics P Internally Limited W Power Dissipation D R 330 C/W Thermal Resistance, Junction to Ambient JA Operating Junction Temperature T +150 C J Operating Ambient Temperature T C A 40 to +85 NCP662/NCP663 40 to +125 NCV662/NCV663 Storage Temperature T 55 to +150 C stg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. This device series contains ESD protection and exceeds the following tests: Human Body Model 2000 V per MILSTD883, Method 3015 Machine Model Method 200 V 2. Latch up capability (85C) 100 mA DC with trigger voltage.