NCS36000DRG ON Semiconductor

VDD 14 VSS 7 NCS36000 Passive Infrared (PIR) Detector Controller The NCS36000 is a fully integrated mixedsignal CMOS device designed for lowcost passive infrared controlling applications. The device integrates two lownoise amplifiers and a LDO regulator to www.onsemi.com drive the sensor. The output of the amplifiers goes to a window comparator that uses internal voltage references from the regulator. MARKING The digital control circuit processes the output from the window DIAGRAM comparator and provides the output to the OUT and LED pin. 14 14 Features NCS36000G 1 3.0 5.75 V Operation AWLYWW SOIC14 40 to 85C D SUFFIX 1 CASE 751A 14 Pin SOIC Package A = Assembly Location Integrated 2Stage Amplifier WL = Wafer Lot Internal LDO to Drive Sensor Y = Year WW = Work Week Internal Oscillator with External RC G = PbFree Package Single or Dual Pulse Detection Direct Drive of LED and OUT PIN CONNECTIONS This is a PbFree Device OP2 O 1 14 VDD OP2 N 2 13 OSC Typical Applications OP1 O 3 12 MODE Automatic Lighting (Residential and Commercial) OP1 N 4 11 NC Automation of Doors OP1 P 5 10 xLED EN VREF 6 9 LED Motion Triggered Events (Animal photography) VSS 7 8 OUT (Top View) ORDERING INFORMATION See detailed ordering and shipping information in the package LDO & 2 VREF 6 dimensions section on page 7 of this data sheet. Voltage References OP1 P 5 12 MODE OP1 N 4 Digital 10 xLED EN 2 Amplifier Window OP1 O 3 Control Circuit Comparator Circuit 9 LED OP2 N 2 8 OUT OP2 O 1 System OSC 13 Oscillator Figure 1. Simplified Block Diagram Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: December, 2015 Rev. 3 NCS36000/DNCS36000 PIN FUNCTION DESCRIPTION Pin No. Pin Name Description 1 OP2 O Output of second amplifier 2 OP2 N Inverting input of second amplifier 3 OP1 O Output of first amplifier 4 OP1 N Inverting input of first amplifier 5 OP1 P Noninverting input of first amplifier 6 VREF Regulated voltage reference to drive sensor 7 VSS Analog ground reference. 8 OUT CMOS output (10 mA Max) 9 LED CMOS output to drive LED (10mA Max) 10 xLED EN Active low LED enable input 11 NC No Connect 12 MODE Pin used to select pulse count mode 13 OSC External oscillator to control clock frequency 14 VDD Analog power supply ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Input Voltage Range (Note 1) V 0.3 to 6.0 V in Output Voltage Range V 0.3 to 6.0 V or (V + 0.3), V out in whichever is lower Maximum Junction Temperature T 140 C J(max) Storage Temperature Range T 65 to 150 C STG ESD Capability, Human Body Model (Note 2) ESD 2 kV HBM ESD Capability, Machine Model (Note 2) ESD 200 V MM Lead Temperature Soldering T 260 C SLD Reflow (SMD Styles Only), PbFree Versions (Note 3) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area. 2. This device series incorporates ESD protection and is tested by the following methods: ESD Human Body Model tested per AECQ100002 (EIA/JESD22A114) ESD Machine Model tested per AECQ100003 (EIA/JESD22A115) Latchup Current Maximum Rating: 150 mA per JEDEC standard: JESD78 3. For information, please refer to our Soldering and Mounting Techniques Reference Manual, SOLDERRM/D THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal Characteristics, DFN6, 3x3.3 mm (Note 4) Will be Completed once C/W Thermal Resistance, JunctiontoAir (Note 5) R package and power JA Thermal Reference, JunctiontoLead2 (Note 5) R consumption is finalized JL Thermal Characteristics, TSOP5 (Note 4) C/W Thermal Resistance, JunctiontoAir (Note 5) See note above. R JA 4. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area. 2 2 5. Values based on copper area of 645 mm (or 1 in ) of 1 oz copper thickness and FR4 PCB substrate. www.onsemi.com 2