LM2575, NCV2575 1.0 A, Adjustable Output Voltage, Step-Down Switching Regulator The LM2575 series of regulators are monolithic integrated circuits ideally suited for easy and convenient design of a stepdown LM2575, NCV2575 Typical Application (Fixed Output Voltage Versions) Feedback 4 L1 7.0 V - 40 V +V in LM2575 330 H Unregulated Output 1 DC Input 5.0 V Regulated C in Output 1.0 A Load D1 2 100 F C out 3OGND 5N/OFF 1N5819 330 F Representative Block Diagram and Typical Application Unregulated DC Input +V in ON/OFF 3.1 V Internal Output R2 /OFF ON Regulator Voltage Versions ( ) 1 5 C 3.3 V 1.7 k in 5.0 V 3.1 k 4 12 V 8.84 k 15 V 11.3 k Feedback Current For adjustable version Limit R2 Fixed Gain R1 = open, R2 = 0 Error Amplifier Comparator Driver Regulated R1 Output Latch Freq 1.0 k L1 V out Shift Output 18 kHz 1.0 Amp 2 1.235 V Switch GND C D1 out Band-Gap Thermal 52 kHz 3 Reset Load Reference Oscillator Shutdown This device contains 162 active transistors. Figure 1. Block Diagram and Typical Application ABSOLUTE MAXIMUM RATINGS (Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.) Rating Symbol Value Unit Maximum Supply Voltage V 45 V in ON/OFF Pin Input Voltage 0.3 V V +V V in Output Voltage to Ground (SteadyState) 1.0 V Power Dissipation Case 314B and 314D (TO220, 5Lead) P Internally Limited W D Thermal Resistance, JunctiontoAmbient R 65 C/W JA Thermal Resistance, JunctiontoCase R 5.0 C/W JC 2 Case 936A (D PAK) P Internally Limited W D Thermal Resistance, Junction toAmbient (Figure 34) R 70 C/W JA Thermal Resistance, JunctiontoCase R 5.0 C/W JC Storage Temperature Range T 65 to +150 C stg Minimum ESD Rating (Human Body Model: C = 100 pF, R = 1.5 k ) 2.0 kV Lead Temperature (Soldering, 10 s) 260 C Maximum Junction Temperature T 150 C J Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.