NCV4274C Regulator, 400 mA, Low Dropout Voltage Description The NCV4274C is a precision micropower voltage regulator with an output current capability of 400 mA available in the DPAK, www.onsemi.com D2PAK and SOT223 packages. The output voltage is accurate within 2.0% with a maximum dropout voltage of 0.5 V with an input up to 40 V. Low quiescent MARKING DIAGRAMS current is a feature drawing only 125 A with a 1 mA load. This part is 4 ideal for automotive and all battery operated microprocessor 1 Input equipment. 74CxxG 2, 4 Ground ALYWW The regulator is protected against reverse battery, short circuit, and 3 Output x DPAK thermal overload conditions. The device can withstand load dump DT SUFFIX transients making it suitable for use in automotive environments. 2 CASE 369C 1 3 Features 3.3 V, 5.0 V, 2.0% Output Options Low 125 A Quiescent Current at 1 mA load current 1 Input 2, 4 Ground NC 400 mA Output Current Capability 3 Output V4274Cxx Fault Protection D2PAK AWLYYWWG DS SUFFIX +60 V Peak Transient Voltage with Respect to GND CASE 418AF 42 V Reverse Voltage Short Circuit Thermal Overload Very Low Dropout Voltage AYW 74Cxx NCV Prefix for Automotive and Other Applications Requiring SOT223 Unique Site and Control Change Requirements AECQ100 ST SUFFIX 1 Qualified and PPAP Capable CASE 318E These are PbFree Devices xx = 33 (3.3 V) = 50 (5.0 V) A = Assembly Location L, WL = Wafer Lot Y, YY = Year W, WW = Work Week G or = PbFree Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information on page 12 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: November, 2018 Rev. 4 NCV4274C/DNCV4274C I Q Bandgap Current Limit and Saturation Sense Refernece + Thermal Shutdown GND Figure 1. Block Diagram Pin Definitions and Functions Pin No. Symbol Function 1 I Input Bypass directly at the IC with a ceramic capacitor to GND. 2,4 GND Ground 3 Q Output Bypass with a capacitor to GND. ABSOLUTE MAXIMUM RATINGS Pin Symbol, Parameter Symbol Condition Min Max Unit I, InputtoRegulator Voltage V 42 45 V I Current I Internally Internally I Limited Limited I, Input peak Transient Voltage to Regulator with Respect V 60 V I to GND (Note 1) Q, Regulated Output Voltage V 1.0 40 V V = V Q Q I Current I Internally Internally Q Limited Limited GND, Ground Current I 100 mA GND Junction Temperature T 40 150 C J Storage Temperature T 50 150 C Stg ESD Capability, Human Body Model (Note 2) ESD 4 kV HB ESD Capability, Machine Model (Note 2) ESD 200 V MM ESD Capability, Charged Device Model (Note 2) ESD 1 kV CDM Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Load Dump Test B (with centralized load dump suppression) according to ISO16750-2 standard. Guaranteed by design. Not tested in production. Passed Class C. 2. This device series incorporates ESD protection and is tested by the following methods: ESD HBM tested per AECQ100002 (EIA/JESD22A114) ESD MM tested per AECQ100003 (EIA/JESD22A115) 2 Field Induced Charge Device Model ESD characterization is not performed on plastic molded packages with body sizes <50mm due to the inability of a small package body to acquire and retain enough charge to meet the minimum CDM discharge current waveform characteristic defined in JEDEC JS 0022014. www.onsemi.com 2