NCV4296-2CSN33T1G ON Semiconductor

NCV4296-2C Voltage Regulator - Low Dropout, Inhibit 30 mA The NCV42962C is a monolithic integrated low dropout voltage www.onsemi.com regulator with an output current capability of 30 mA available in the TSOP5 package. The output voltage is accurate within 4.0% with a maximum MARKING dropout voltage of 250 mV with an input up to 45 V. Low quiescent DIAGRAM current is a feature typically drawing only 160 A with a 1 mA load. With Inhibit feature, the regulator can be turned off and the device 5 consumes less than 5 A of quiescent current. This part is ideal for TSOP5 xxxAYW automotive and all battery operated microprocessor equipment. 5 CASE 483 The regulator is protected against reverse battery, short circuit and 1 1 thermal overload conditions. xxx = Specific Device Code A = Assembly Location Features Y = Year Output Voltage Options: 3.3 V, 5.0 V W = Work Week Output Voltage Accuracy: 4.0% = PbFree Package (Note: Microdot may be in either location) Output Current: up to 30 mA Low Quiescent Current (typ. 160 A 1 mA) Low Dropout Voltage (typ. 65 mV 20 mA) PIN CONNECTIONS Wide Input Voltage Operating Range: up to 45 V INH GND 1 5 Inhibit Input GND Protection Features: 2 Current Limitation V V 3 4 in out Thermal Shutdown (Top View) Reverse Polarity Protection and Reverse Bias Protection AECQ100 Grade 1 Qualified and PPAP Capable This is a PbFree Device ORDERING INFORMATION Typical Applications See detailed ordering, marking and shipping information on page 10 of this data sheet. Microprocessor Systems Power Supply Output Input V V out in C C in out NCV42962C 100 nF 2.2 F INH GND Inhibit Figure 1. Applications Circuit Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: October, 2019 Rev. 1 NCV42962C/DNCV42962C V V out in VOLTAGE V REF REFERENCE SP INH INHIBIT V REF SATURATION SP PROTECTION TSD THERMAL TSD SHUTDOWN GND Figure 2. Simplified Block Diagram PIN FUNCTION DESCRIPTION Pin No. TSOP5 Pin Name Description 1 INH Inhibit Input. Low level disables the IC. 2 GND Power Supply Ground. 3 V Unregulated Positive Power Supply Input. Connect 0.1 F capacitor to ground. in 4 V Regulated Positive Output Voltage. Connect 2.2 F capacitor with ESR < 7 to ground. out 5 GND Power Supply Ground. ABSOLUTE MAXIMUM RATINGS Rating Symbol Min Max Unit Input Voltage DC (Note 1) V V in DC 42 45 Input Voltage (Note 2) U V s Load Dump Suppressed 60 Output Voltage V 6 30 V out Inhibit Input Voltage V V INH DC 42 45 Inhibit Input Current Range I mA INH DC 0.5 Transient, 0.3 V V 45 V, t < 1 ms 5 5 in p Maximum Junction Temperature T 40 150 C J(max) Storage Temperature T 50 150 C STG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area. 2. Load Dump Test B (with centralized load dump suppression) according to ISO16750 2 standard. Guaranteed by design. Not tested in production. Passed Class A according to ISO167501. ESD CAPABILITY (Note 3) Rating Symbol Min Max Unit ESD Capability, Human Body Model ESD 2 2 kV HBM 3. This device series incorporates ESD protection and is tested by the following methods: ESD Human Body Model tested per AECQ100002 (JS0012010) 2 Field Induced Charge Device Model ESD characterization is not performed on plastic molded packages with body sizes <50mm due to the inability of a small package body to acquire and retain enough charge to meet the minimum CDM discharge current waveform characteristic defined in JEDEC JS0022014. www.onsemi.com 2