LDO Regulator - UltraLow I CMOS Q, 150 mA NCV8170 The NCV8170 series of CMOS low dropout regulators are designed specifically for continuous on battery-powered applications which www.onsemi.com require ultra-low quiescent current. The ultra-low consumption of typ. 500 nA ensures long battery life and dynamic transient boost feature improves device transient response for wireless communication 6 applications. The device is available in small 1 1 mm xDFN4 and 1 1 SOT563 packages. XDFN4 SOT563 MX SUFFIX XV SUFFIX Features CASE 711AJ CASE 463A Operating Input Voltage Range: 2.2 V to 5.5 V Output Voltage Range: 1.2 V to 3.6 V (0.1 V Steps) MARKING DIAGRAMS Ultra-Low Quiescent Current Typ. 0.5 A Low Dropout: 170 mV Typ. at 150 mA XDFN4 High Output Voltage Accuracy 1% XX M Stable with Ceramic Capacitors 1 F 1 Over-Current Protection Thermal Shutdown Protection XX = Specific Device Code M = Date Code NCV8170A for Active Discharge Option Available in Small 1 1 mm xDFN4 and SOT563 Packages SOT563 NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ100 XX M Qualified and PPAP Capable 1 These Devices are PbFree, Halogen Free/BFR Free and are RoHS XX = Specific Device Code Compliant M = Month Code = PbFree Package Typical Applications Telematics and Infotainment Systems ORDERING INFORMATION Automotive Keyless Entry Systems See detailed ordering, marking and shipping information on ADAS Camera Modules page 19 of this data sheet. Navigation Systems V V IN OUT IN OUT NCV8170 C 1 F1EN C F IN OUT GND Figure 1. Typical Application Schematic Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: January, 2020 Rev. 6 NCV8170/DNCV8170 PIN FUNCTION DESCRIPTION Pin No. Pin No. XDFN4 SOT563 Pin Name Description 4 1 IN Power Supply Input Voltage 2 2 GND Power Supply Ground 3 6 EN Chip Enable Pin (Active H) 1 3 OUT Output Pin EPAD EPAD Internally Connected to GND 4 NC No Connect 5 GND Power Supply Ground ABSOLUTE MAXIMUM RATINGS Symbol Rating Value Unit V Input Voltage (Note 1) 6.0 V IN V Output Voltage 0.3 to V + 0.3 V OUT IN V Chip Enable Input 0.3 to 6.0 V CE T Maximum Junction Temperature 125 C J(MAX) T Storage Temperature 55 to 150 C STG ESD ESD Capability, Human Body Model (Note 2) 2000 V HBM ESD ESD Capability, Machine Model (Note 2) 200 V MM Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area. 2. This device series incorporates ESD protection and is tested by the following methods: ESD Human Body Model tested per AEC-Q100-002 (EIA/JESD22-A114) ESD Machine Model tested per AEC-Q100-003 (EIA/JESD22-A115) Latchup Current Maximum Rating tested per JEDEC standard: JESD78 THERMAL CHARACTERISTICS Symbol Rating Value Unit R Thermal Characteristics, Thermal Resistance, Junction-to-Air C/W JA XDFN4 1 1mm 250 SOT563 200 Figure 2. Simplified Block Diagram www.onsemi.com 2