Self-Protected Low Side Driver with In-Rush Current Management NCV8413 The NCV8413 is a three terminal protected LowSide Smart Discrete FET. The protection features include Delta Thermal www.onsemi.com Shutdown, overcurrent, overtemperature, ESD and integrated Drain to Gate clamping for over voltage protection. The device also offers fault indication via the gate pin. This device is suitable for harsh automotive V I MAX DSS D environments. (Clamped) (Limited) R TYP DS(ON) 42 V 37 m 10 V 22 A Features Short Circuit Protection with InRush Current Management Thermal Shutdown with Automatic Restart Delta Thermal Shutdown Over Voltage Protection Integrated Clamp for Over Voltage Protection and Inductive DPAK CASE 369C Switching STYLE 2 ESD Protection dV/dt Robustness Analog Drive Capability (Logic Level Input) MARKING DIAGRAM NCV Prefix for Automotive and Other Applications Requiring 1 AYWW Unique Site and Control Change Requirements AECQ101 Grade 1 2 NCV 4 Qualified and PPAP Capable 8413G 3 These Devices are PbFree and are RoHS Compliant A = Assembly Location Typical Applications Y = Year WW = Work Week Switch a Variety of Resistive, Inductive and Capacitive Loads G = PbFree Package Can Replace Electromechanical Relays and Discrete Circuits Automotive / Industrial PIN ASSIGNMENT Style 2 Drain 1 = Gate 2 = Drain Overvoltage 3 = Source Gate Protection 4 = Drain Input ESD Protection ORDERING INFORMATION Device Package Shipping Temperature Current Current NCV8413DTRKG DPAK 2500 / Tape & Limit Limit Sense (PbFree) Reel For information on tape and reel specifications, including part orientation and tape sizes, please Source refer to our Tape and Reel Packaging Specification Figure 1. Block Diagram Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: December, 2019 Rev. 1 NCV8413/DNCV8413 Table 1. MAXIMUM RATINGS Rating Symbol Value (min) Unit DraintoSource Voltage Internally Clamped V 42 V DSS DraintoGate Voltage Internally Clamped V 42 V DG GatetoSource Voltage V 14 V GS Drain Current Continuous I Internally Limited D Total Power Dissipation P W D T = 25C (Note 1) 1.30 A T = 25C (Note 2) 2.72 A Thermal Resistance C/W JunctiontoCase (Soldering Point) R 1.30 thJC JunctiontoCase (Top) R 54.2 thJT JunctiontoAmbient (Note 1) R 95.7 thJA JunctiontoAmbient (Note 2) R 45.9 thJA Single Pulse Inductive Load Switching Energy E 470 mJ AS (L = 120 mH, I = 2.8 A, V = 5 V, R = 25 , T = 25C) Lpeak GS G Jstart U * 55 V Load Dump Voltage (V = 0 and 10 V, R = 4.5 ) (Note 4) GS L S Operating Junction Temperature T 40 to 150 C J Storage Temperature T 55 to 150 C storage ESD CHARACTERISTICS (Note 3, 5) ElectroStatic Discharge Capability ESD kV Human Body Model (HBM) 4 Charged Device Model (CDM) 1 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Mounted onto a 2 square FR4 board (100 sq mm, 1 oz. Cu, steady state) 2. Mounted onto a 2 square FR4 board (645 sq mm, 1 oz. Cu, steady state) 3. Not tested in production. 4. Load Dump Test B (with centralized load dump suppression) according to ISO16750 2 standard. Guaranteed by design. Not tested in production. Passed Class C according to ISO16750 1. 5. This device series incorporates ESD protection and is tested by the following methods: ESD Human Body Model tested per AECQ100002 (JS0012017) Field Induced Charge Device Model ESD characterization is not performed on plastic molded packages with body sizes smaller than 2 x 2 mm due to the inability of a small package body to acquire and retain enough charge to meet the minimum CDM discharge current waveform characteristic defined in JEDEC JS0022018 Figure 2. Voltage and Current Convention www.onsemi.com 2