NCV8570MN330R2G ON Semiconductor

NCV8570 200 mA, Ultra Low Noise, High PSRR, BiCMOS RF LDO Regulator Noise sensitive RF applications such as Power Amplifiers in satellite radios, infotainment equipment, and precision instrumentation for NCV8570 V in V out Bandgap Current Reference Limit Voltage C noise CE Active Discharge GND Figure 2. Simplified Block Diagram PIN FUNCTION DESCRIPTION Pin No. DFN6 TSOP5 Pin Name Description 1 3 CE Chip Enable: This pin allows on/off control of the regulator. To disable the device, connect to GND. If this function is not in use, connect to V . Internal 5 M Pull Down resistor is in connected between CE and GND. 2, 5, EPAD 2 GND Power Supply Ground (Pins are fused for the DFN package) 3 1 V Power Supply Input Voltage in 4 5 V Regulated Output Voltage out 6 4 C Noise reduction pin. (Connect 100 nF or 10 nF capacitor to GND) noise MAXIMUM RATINGS Rating Symbol Value Unit Input Voltage (Note 1) V 0.3 V to 6 V V in Chip Enable Voltage V 0.3 V to V +0.3 V V CE in Noise Reduction Voltage V 0.3 V to V +0.3 V V Cnoise in Output Voltage V 0.3 V to V +0.3 V V out in Maximum Junction Temperature (Note 1) T 150 C J(max) Storage Temperature Range T 55 to 150 C STG Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. NOTE: This device series contains ESD protection and exceeds the following tests: Human Body Model 2000 V per MILSTD883, Method 3015 Machine Model Method 200 V This device series meets or exceeds AEC Q100 standard. THERMAL CHARACTERISTICS Rating Symbol Value Unit Package Thermal Resistance, DFN6: (Note 1) R C/W JA JunctiontoLead (pin 2) 37 Junction toAmbient 120 Package Thermal Resistance, TSOP5: (Note 1) R C/W JA JunctiontoLead (pin 5) 109 Junction toAmbient 220 1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area