NL17SG08DFT2G ON Semiconductor

L M NL17SG08 Single 2-Input AND Gate The NL17SG08 MiniGate is an advanced highspeed CMOS 2input AND gate in ultrasmall footprint. The NL17SG08 input structures provides protection when voltages up to 4.6 V are applied. www.onsemi.com Features Wide Operating V Range: 0.9 V to 3.6 V CC MARKING High Speed: t = 2.5 ns (Typ) at V = 3.0 V, C = 15 pF DIAGRAMS PD CC L Low Power Dissipation: I = 0.5 A (Max) at T = 25C CC A SOT953 Y M 4.6 V Overvoltage Tolerant (OVT) Input Pins CASE 527AE 1 UltraSmall Packages UDFN6 NLV Prefix for Automotive and Other Applications Requiring 1.0 x 1.0 M Unique Site and Control Change Requirements AECQ101 CASE 517BX Qualified and PPAP Capable UDFN6 These are PbFree and HalideFree Devices 1.45 x 1.0 M CASE 517AQ IN A 1 5 V IN B 1 5 V CC CC SC88A AT M DF SUFFIX CASE 419A IN A GND 2 2 M = Date Code* IN B 3 4 OUT Y GND 3 4 OUT Y = PbFree Package (Note: Microdot may be in either location) *Date Code orientation and/or position may vary Figure 1. SOT953 Figure 1. SC88A depending upon manufacturing location. (Top Thru View) (Top View) PIN ASSIGNMENT IN B 1 6 V PIN SOT953 SC88A UDFN6 CC 1 IN A IN B IN B 2 GND IN A IN A IN A 2 5 NC 3 IN B GND GND 4 OUT Y OUT Y OUT Y GND 3 4 OUT Y 5V V VC CC CC 6 V CC Figure 1. UDFN6 (Top View) FUNCTION TABLE Inputs Output IN A & OUT Y AB Y IN B L L L Figure 2. Logic Symbol L H L H L L H H H ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: June, 2016 Rev. 7 NL17SG08/D LNL17SG08 MAXIMUM RATINGS Symbol Parameter Value Unit V DC Supply Voltage 0.5 to +5.5 V CC V DC Input Voltage 0.5 to +4.6 V IN V DC Output Voltage Output at High or Low State 0.5 to V +0.5 V OUT CC PowerDown Mode (V = 0 V) 0.5 to +4.6 CC I DC Input Diode Current V < GND 20 mA IK IN I DC Output Diode Current V < GND 20 mA OK OUT I DC Output Source/Sink Current 20 mA OUT I DC Supply Current per Supply Pin 20 mA CC I DC Ground Current per Ground Pin 20 mA GND T Storage Temperature Range 65 to +150 C STG T Lead Temperature, 1 mm from Case for 10 Seconds 260 C L T Junction Temperature Under Bias +150 C J MSL Moisture Sensitivity Level 1 F Flammability Rating Oxygen Index: 28 to 34 UL 94 V0 0.125 in R V ESD Withstand Voltage Human Body Model (Note 2) >2000 V ESD Machine Model (Note 3) >100 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Measured with minimum pad spacing on an FR4 board, using 10 mmby1 inch, 2ounce copper trace with no air flow. 2. Tested to EIA/JESD22A114A. 3. Tested to EIA/JESD22A115A. RECOMMENDED OPERATING CONDITIONS Symbol Characteristics Min Max Unit V Positive DC Supply Voltage 0.9 3.6 V CC V Digital Input Voltage 0.0 3.6 V IN V Output Voltage Output at High or Low State 0.0 V V OUT CC PowerDown Mode (V = 0 V) 0.0 3.6 CC T Operating Temperature Range 55 +125 C A t / V Input Transition Rise or Fail Rate V = 3.3 V 0.3 V 0 10 ns/V CC Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. www.onsemi.com 2