NP1100SAT3G ON Semiconductor

NP Series Preferred Devices Thyristor Surge Protectors High Voltage Bidirectional NP Series Thyristor Surge Protector Devices (TSPD) protect telecommunication circuits such as central office, access, and customer premises equipment from overvoltage conditions. These are bidirectional devices so they are able to have functionality of 2 devices NP Series ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristics (Note 1) Symbol Min Typ Max Unit Breakover Voltage (Both Polarities) V V (BO) NP0640SxT3G 77 NP0720SxT3G 88 NP0900SxT3G 98 NP1100SxT3G 130 NP1300SxT3G 160 NP1500SxT3G 180 NP1800SxT3G 220 NP2100SxT3G 240 NP2300SxT3G 260 NP2600SxT3G 300 NP3100SxT3G 350 NP3500SxT3G 400 OffState Voltage (Both Polarities) V V DRM NP0640SxT3G 58 NP0720SxT3G 65 NP0900SxT3G 75 NP1100SxT3G 90 NP1300SxT3G 120 NP1500SxT3G 140 NP1800SxT3G 170 NP2100SxT3G 180 NP2300SxT3G 190 NP2600SxT3G 220 NP3100SxT3G 275 NP3500SxT3G 320 Off State Current ( V = 50 V ) Both Polarities I 2.0 A D1 DRM1 ( V = V ) Both Polarities I 5.0 A D2 DRM DRM2 Holding Current (Both Polarities) (Note 4) V = 500 V I = 2.2 A I 150 250 mA S T H OnState Voltage I = 1.0 A(pk) (PW = 300 Sec, DC = 2%) V 4.0 V T T Maximum NonRepetitive Rate of Change of OnState Current (Note 1) di/dt 500 A/ Sec (Haefely test method, 1.0 pk < 100 A) Critical Rate of Rise of OffState Voltage dv/dt 5.0 kV/ Sec (Linear Waveform, V = 0.8 V , T = 25C) D DRM J CAPACITANCE Typ A B C Characteristics Symbol Unit (f=1.0 MHz, 1.0 V , 2 Vdc bias) C pF rms o NP0640SxT3G 84 129 222 NP0720SxT3G 79 123 198 NP0900SxT3G 65 122 122 NP1100SxT3G 58 95 154 NP1300SxT3G 46 75 120 NP1500SxT3G 44 70 113 NP1800SxT3G 39 59 99 NP2100SxT3G 37 59 97 NP2300SxT3G 36 56 56 NP2600SxT3G 33 52 81 NP3100SxT3G 31 47 76 NP3500SxT3G 28 44 71 1. Electrical parameters are based on pulsed test methods. 2. di/dt must not be exceeded of a maximum of 100 A/ Sec in this application. 3. Measured under pulsed conditions to reduce heating 4. Allow cooling before testing second polarity.