NRVB0540T3G ON Semiconductor

MBR0540T1G, NRVB0540T1G, MBR0540T3G, NRVB0540T3G Schottky Power Rectifier, MBR0540T1G, NRVB0540T1G, MBR0540T3G, NRVB0540T3G MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 40 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I A O (At Rated V , T = 115C) 0.5 R C Peak Repetitive Forward Current I A FRM (At Rated V , Square Wave, 20 kHz, T = 115C) 1.0 R C NonRepetitive Peak Surge Current I A FSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) 5.5 Storage/Operating Case Temperature Range T , T 55 to +150 C stg C Operating Junction Temperature T 55 to +150 C J Voltage Rate of Change dv/dt V/ s (Rated V , T = 25C) 1000 R J Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance JunctiontoLead (Note 1) R 118 C/W tjl Thermal Resistance JunctiontoAmbient (Note 2) R 206 tja 1. Mounted with minimum recommended pad size, PC Board FR4. 2. 1 inch square pad size (1 X 0.5 inch for each lead) on FR4 board. ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit v V Maximum Instantaneous Forward Voltage (Note 3) T = 25C T = 100C F J J (i = 0.5 A) 0.51 0.46 F (i = 1 A) 0.62 0.61 F Maximum Instantaneous Reverse Current (Note 3) I T = 25C T = 100C A R J J (V = 40 V) 20 13,000 R (V = 20 V) R 10 5,000 3. Pulse Test: Pulse Width 250 s, Duty Cycle 2.0%. 100 10 10 25C 1.0 1.0 T = 125C T = -40C J J T = 125C J T = 25C J T = 100C J T = 100C J T = 25C J 0.1 0.1 0.2 0.4 0.6 0.8 1.0 1.2 0.2 0.4 0.6 0.8 1.0 1.2 v , INSTANTANEOUS FORWARD VOLTAGE (VOLTS) V , MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) F F Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage