NSDEMP11XV6T1, NSDEMP11XV6T5 Common Anode Quad Array Switching Diode These Common Anode Epitaxial Planar QUAD Diodes are designed for use in ultra high speed switching applications. The NSDEMP11XV6T1, NSDEMP11XV6T5 ELECTRICAL CHARACTERISTICS (T = 25C) A Characteristic Symbol Condition Min Max Unit Reverse Voltage Leakage Current I V = 70 V 0.1 Adc R R Forward Voltage V I = 100 mA 1.2 Vdc F F Reverse Breakdown Voltage V 0 Vdc I = 100 A R R Diode Capacitance C V = 6.0 V, f = 1.0 MHz 3.5 pF D R Reverse Recovery Time t (Note 3) I = 5.0 mA, V = 6.0 V, R = 100 , I = 0.1 I 4.0 ns rr F R L rr R 3. t Test Circuit for NSDEMP11XV6T1 in Figure 4. rr TYPICAL ELECTRICAL CHARACTERISTICS 100 10 T = 150C A T = 85C A T = 125C A 1.0 10 T = 40C A T = 85C A 0.1 T = 55C 1.0 A T = 25C A 0.01 T = 25C A 0.001 0.1 0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 50 V , FORWARD VOLTAGE (VOLTS) V , REVERSE VOLTAGE (VOLTS) F R Figure 1. Forward Voltage Figure 2. Reverse Current 1.75 1.5 1.25 1.0 0.75 0 24 6 8 V , REVERSE VOLTAGE (VOLTS) R Figure 3. Diode Capacitance t r t p t rr I F t t 10% R I = 0.1 I L rr R A 90% I = 5.0 mA F V = 6 V R V R t = 2 s p R = 100 L t = 0.35 ns r RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE OUTPUT PULSE Figure 4. Reverse Recovery Time Test Circuit for the NSDEMP11XV6T1