NSDEMP11XV6T1G ON Semiconductor

NSDEMP11XV6T1, NSDEMP11XV6T5 Common Anode Quad Array Switching Diode These Common Anode Epitaxial Planar QUAD Diodes are designed for use in ultra high speed switching applications. The NSDEMP11XV6T1, NSDEMP11XV6T5 ELECTRICAL CHARACTERISTICS (T = 25C) A Characteristic Symbol Condition Min Max Unit Reverse Voltage Leakage Current I V = 70 V 0.1 Adc R R Forward Voltage V I = 100 mA 1.2 Vdc F F Reverse Breakdown Voltage V 0 Vdc I = 100 A R R Diode Capacitance C V = 6.0 V, f = 1.0 MHz 3.5 pF D R Reverse Recovery Time t (Note 3) I = 5.0 mA, V = 6.0 V, R = 100 , I = 0.1 I 4.0 ns rr F R L rr R 3. t Test Circuit for NSDEMP11XV6T1 in Figure 4. rr TYPICAL ELECTRICAL CHARACTERISTICS 100 10 T = 150C A T = 85C A T = 125C A 1.0 10 T = 40C A T = 85C A 0.1 T = 55C 1.0 A T = 25C A 0.01 T = 25C A 0.001 0.1 0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 50 V , FORWARD VOLTAGE (VOLTS) V , REVERSE VOLTAGE (VOLTS) F R Figure 1. Forward Voltage Figure 2. Reverse Current 1.75 1.5 1.25 1.0 0.75 0 24 6 8 V , REVERSE VOLTAGE (VOLTS) R Figure 3. Diode Capacitance t r t p t rr I F t t 10% R I = 0.1 I L rr R A 90% I = 5.0 mA F V = 6 V R V R t = 2 s p R = 100 L t = 0.35 ns r RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE OUTPUT PULSE Figure 4. Reverse Recovery Time Test Circuit for the NSDEMP11XV6T1