NSI45030T1G, NSV45030T1G Constant Current Regulator & LED Driver 45 V, 30 mA 15%, 460 mW Package The linear constant current regulator (CCR) is a simple, economical and robust device designed to provide a costeffective solution for www.onsemi.com regulating current in LEDs (similar to Constant Current Diode, CCD). The CCR is based on Self-Biased Transistor (SBT) technology and I = 30 mA regulates current over a wide voltage range. It is designed with a reg(SS) negative temperature coefficient to protect LEDs from thermal Vak = 7.5 V runaway at extreme voltages and currents. The CCR turns on immediately and is at 25% of regulation with Anode 2 only 0.5 V Vak. It requires no external components allowing it to be designed as a high or lowside regulator. The high anode-cathode voltage rating withstands surges common in Automotive, Industrial and Commercial Signage applications. The CCR comes in thermally robust packages and is qualified to AEC-Q101 standard, and UL94V0 certified. Cathode 1 Features Robust Power Package: 460 mW Wide Operating Voltage Range 2 Immediate Turn-On 1 Voltage Surge Suppressing Protecting LEDs SOD123 SBT (SelfBiased Transistor) Technology CASE 425 Negative Temperature Coefficient STYLE 1 NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 MARKING DIAGRAM Qualified and PPAP Capable* These Devices are PbFree, Halogen Free/BFR Free and are RoHS AG M Compliant 12 Applications AG = Device Code Automobile: Chevron Side Mirror Markers, Cluster, Display & M = Date Code Instrument Backlighting, CHMSL, Map Light = PbFree Package AC Lighting Panels, Display Signage, Decorative Lighting, Channel (Note: Microdot may be in either location) Lettering Switch Contact Wetting ORDERING INFORMATION Application Note AND8391/D Power Dissipation Considerations Application Note AND8349/D Automotive CHMSL Device Package Shipping MAXIMUM RATINGS (T = 25C unless otherwise noted) NSI45030T1G SOD123 3000/Tape & Reel A (PbFree) Rating Symbol Value Unit AnodeCathode Voltage Vak Max 45 V NSV45030T1G* SOD123 3000/Tape & Reel (PbFree) Reverse Voltage V 500 mV R Operating and Storage Junction T , T 55 to +150 C J stg For information on tape and reel specifications, Temperature Range including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications ESD Rating: Human Body Model ESD Class 1C Brochure, BRD8011/D. Machine Model Class B Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: June, 2015 Rev. 5 NSI45030/DNSI45030T1G, NSV45030T1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Steady State Current Vak = 7.5 V (Note 1) I 25.5 30 34.5 mA reg(SS) Voltage Overhead (Note 2) V 1.8 V overhead Pulse Current Vak = 7.5 V (Note 3) I 30.3 36.4 42.5 mA reg(P) Capacitance Vak = 7.5 V (Note 4) C 2.5 pF Capacitance Vak = 0 V (Note 4) C 5.7 pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2 1. I steady state is the voltage (Vak) applied for a time duration 10 sec, using FR4 300 mm 1 oz. Copper traces, in still air. reg(SS) 2. V = V V . V is typical value for 75% I . overhead in LEDs overhead reg(SS) 3. I nonrepetitive pulse test. Pulse width t 300 sec. reg(P) 4. f = 1 MHz, 0.02 V RMS. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation (Note 5) T = 25C P 208 mW A D Derate above 25C 1.66 mW/C Thermal Resistance, JunctiontoAmbient (Note 5) R 600 C/W JA Thermal Reference, LeadtoAmbient (Note 5) 404 C/W R LA Thermal Reference, JunctiontoCathode Lead (Note 5) 196 C/W R JL Total Device Dissipation (Note 6) T = 25C P 227 mW A D Derate above 25C 1.8 mW/C Thermal Resistance, JunctiontoAmbient (Note 6) R 550 C/W JA Thermal Reference, LeadtoAmbient (Note 6) 390 C/W R LA Thermal Reference, JunctiontoCathode Lead (Note 6) 160 C/W R JL Total Device Dissipation (Note 7) T = 25C P 347 mW A D Derate above 25C 2.8 mW/C Thermal Resistance, JunctiontoAmbient (Note 7) 360 C/W R JA Thermal Reference, LeadtoAmbient (Note 7) 200 C/W R LA Thermal Reference, JunctiontoCathode Lead (Note 7) 160 C/W R JL Total Device Dissipation (Note 8) T = 25C P 368 mW A D Derate above 25C 2.9 mW/C Thermal Resistance, JunctiontoAmbient (Note 8) R 340 C/W JA Thermal Reference, LeadtoAmbient (Note 8) 208 C/W R LA Thermal Reference, JunctiontoCathode Lead (Note 8) 132 C/W R JL Total Device Dissipation (Note 9) T = 25C P 436 mW A D Derate above 25C 3.5 mW/C Thermal Resistance, JunctiontoAmbient (Note 9) R 287 C/W JA Thermal Reference, LeadtoAmbient (Note 9) 139 C/W R LA Thermal Reference, JunctiontoCathode Lead (Note 9) 148 C/W R JL Total Device Dissipation (Note 10) T = 25C P 463 mW A D Derate above 25C 3.7 mW/C Thermal Resistance, JunctiontoAmbient (Note 10) R 270 C/W JA Thermal Reference, LeadtoAmbient (Note 10) 150 C/W R LA Thermal Reference, JunctiontoCathode Lead (Note 10) 120 C/W R JL Junction and Storage Temperature Range T , T 55 to +150 C J stg 2 5. FR4 100 mm , 1 oz. copper traces, still air. 2 6. FR4 100 mm , 2 oz. copper traces, still air. 2 7. FR4 300 mm , 1 oz. copper traces, still air. 2 8. FR4 300 mm , 2 oz. copper traces, still air. 2 9. FR4 500 mm , 1 oz. copper traces, still air. 2 10.FR4 500 mm , 2 oz. copper traces, still air. NOTE: Lead measurements are made by noncontact methods such as IR with treated surface to increase emissivity to 0.9. Lead temperature measurement by attaching a T/C may yield values as high as 30% higher C/W values based upon empirical measurements and method of attachment. www.onsemi.com 2